Tokyo Electron Limited

Supercritical Systems, Inc.

Marc De Leeuwe

Glenn A Roberson, Jr

William H Mullee

Bentley J Palmer

A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process

A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

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Templeton, CA, United States of America

Marc De Leeuwe