Applied Materials, Inc.

Maosheng Zhao

Juan Carlos Rocha-Alvarez

Shankar Venkataraman

Ju-Hyung Lee

Inna Shmurun

Soova Sen

Mao D Lim

Li-Qun Xia

Troy Kim

Srinivas D Nemani

Annamalai Lakshmanan

Tzu-Fang Huang

Lihua Li

Ying Yu

Lun Tsuei

Soovo Sen

The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Method and apparatus for cleaning a CVD chamber

Computer-readable medium that contains software for executing a method for cleaning a CVD chamber

Method for cleaning a CVD chamber

An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.

Heated gas distribution plate for a processing chamber

A method for cleaning a plasma enhanced chemical vapor deposition chamber. The method includes introducing a cleaning gas into the plasma enhanced chemical vapor deposition chamber, forming a plasma using a very high frequency (VHF) power having a frequency in a range from about 20 MHz to about 100 MHz, and reacting the cleaning gas with deposits within the chamber in the presence of the plasma.

Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy

A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.

Cleaning of CVD chambers using remote source with cxfyoz based chemistry

A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.

Method for curing low dielectric constant film using direct current bias

A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power

Growing community of inventors

Santa Clara, CA, United States of America

Maosheng Zhao