Applied Materials, Inc.

Momentive Performance Materials Gmbh

Manjunath Subbanna

Ala Moradian

Michael Robert Rice

Tetsuya Ishikawa

Errol Antonio C Sanchez

Kartik Bhupendra Shah

Swaminathan T Srinivasan

Peter Reimer

Matthias Bauer

Martin Jeffrey Salinas

Zuoming Zhu

John Tolle

Shu-Kwan Danny Lau

Saurabh Chopra

Wei Fan

Chia Cheng Chin

Sohrab Zokaei

Marc David Shull

Thomas Kirschenheiter

Creighton Tomek

Chandra Mohapatra

Erika R Warrick

Eelco Galestien

The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

Methods of correlating zones of processing chambers, and related systems and methods

The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Chamber architecture for epitaxial deposition and advanced epitaxial film applications

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Gas injector for epitaxy and CVD chamber

A light emitting diode assembly comprising such thermal management assembly is shown and described herein. The light emitting diode assembly may comprise a light emitting diode in thermal contact with a heat spreader. The heat spreader may comprise a core and/or fins. The core and/or fins comprise a thermal pyrolytic graphite material. The thermal management assembly comprising the core and/or fins can dissipate heat from the light emitting diode.

Light emitting diode assembly using thermal pyrolytic graphite for thermal management

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Bengaluru, India

Manjunath Subbanna