Novellus Systems Incorporated

Applied Materials, Inc.

Intel Corporation

Mandyam Sriram

Bart Jan Van Schravendijk

Pramod Subramonium

Srinivas Gandikota

George Andrew Antonelli

Jon Henri

Seshasayee Varadarajan

Jennifer O'Loughlin

Vishwanathan Rangarajan

Shankar Swaminathan

Yixiong Yang

Dennis Michael Hausmann

Keith Fox

Joseph Yudovsky

Kevin Griffin

Jacqueline S Wrench

Yongsik Yu

Adrien LaVoie

Dong Niu

Kaushik Chattopadhyay

Sanjeev Baluja

Ming Chu Li

Hu Kang

Sirish K Reddy

Patrick G Breiling

Mario Dave Silvetti

Andrew John McKerrow

John B Alexy

Jason Dirk Haverkamp

Kirthi Kattige

Joe Womack

Roey Shaviv

Hari K Ponnekanti

Hui-Jung Wu

Steven C H Hung

James Samuel Sims

Yong Wu

Qingguo Wu

Ananda K Banerji

Yong Yang

Keiichi Tanaka

Bart K Van Schravendijk

Wenyi Liu

Jianqiu Guo

Li-Qun Xia

Kelvin Chan

Bryan L Buckalew

Ramesh Chandrasekharan

Tsutomu Tanaka

Yihong Chen

Dmitry A Dzilno

Jared Ahmad Lee

Easwar Srinivasan

Wei V Tang

Haiying Fu

Thomas W Mountsier

Shih Chung Chen

Jennifer Leigh Petraglia

Arkaprava Dan

Chi-Chou Lin

Antonio Xavier

Joseph Lindsey Womack

Thomas G Jewell

Ilanit Fisher

Tom Dorsh

Chenfei Shen

Abhijit Basu Mallick

Michael Robert Rice

Adrien Lavoie

David P Thompson

Juan Carlos Rocha-Alvarez

Mark Joseph Saly

Seshadri Ganguli

Pramit Manna

Kallol Bera

Karthik Janakiraman

Mihaela A Balseanu

Alexandros T Demos

He Ren

Bhaskar Jyoti Bhuyan

Mohith E Verghese

Mukund Srinivasan

Naomi Yoshida

Joseph F AuBuchon

Eswaranand Venkatasubramanian

Muhannad Mustafa

Wen Xiao Chen

Kenji Takeshita

Akhil N Singhal

Dale R Dubois

Abhishek Chowdhury

Subramanian Tamilmani

Garry K Kwong

Chunhai Ji

Alice Hollister

Jose Alexandro Romero

Vijayabhaskara Venkatagiriyappa

Kunal Bhatnagar

Sriharish Srinivasan

A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Method of tuning film properties of metal nitride using plasma

A method of depositing a film stack including films of different compositions in a process station using a plasma is described. The method includes: in a first plasma-activated film deposition phase, depositing a first film having a first film composition on a substrate, and, in a second plasma-activated deposition phase, depositing a second film having a second film composition on the first film, where the second film composition is different from the first film composition. Deposition of the first film can include delivering at least two first deposition phase reactants to the process station via a delivery line; and deposition of the second film can include delivering at least two second deposition phase reactants to the process station via the same delivery line that was used during deposition of the first film. The method may also include a step of purging the delivery line.

Plasma-enhanced deposition of film stacks

Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.

Apparatus and methods for fine planar non-uniformity improvement

Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

Method of reducing titanium nitride etching during tungsten film formation

A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.

MOSFET gate engineerinng with dipole films

Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Enhancing gapfill performance of dram word line

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Fluorine-free tungsten ALD for dielectric selectivity improvement

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfOas a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

PMOS high-k metal gates

Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

Paired dynamic parallel plate capacitively coupled plasmas

Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Single wafer processing environments with spatial separation

Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Enhanced spatial ALD of metals through controlled precursor mixing

Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Susceptor wafer chucks for bowed wafers

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 &#x212b; to less than or equal to 50 &#x212b;. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfOas a high-&#x3ba; metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

PMOS high-K metal gates

Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Injector for batch processing and methods of use

Growing community of inventors

Beaverton, OR, United States of America

Mandyam Sriram