Asml Netherlands B.v.

Globalfoundries Inc.

Orlaco Products B.v.

Mandeep Singh

Hugo Matthieu Visser

Josephus Johannes Maria Braat

Vadim Yevgenyevich Banine

Maarten Marinus Johannes Wilhelmus Van Herpen

Derk Jan Wilfred Klunder

Harm-Jan Voorma

A mirror replacement system includes a camera having a frontal lens on an outer surface of the camera. The frontal lens includes an inner surface and an outer surface. A nano-etched coating is deposited on at least one of the inner and outer surfaces of the lens.

Mirror replacement system

The present disclosure is directed to various masks for use during EUV photolithography processes. In one example, an EUV mask is disclosed that includes, among other things, a substrate, a multilayer stack comprised of a plurality of multilayer pairs of ruthenium and silicon formed above the substrate, wherein the mask is adapted to, when irradiated with EUV light, have an effective reflective plane that is positioned 32 nm or less below an uppermost surface of the multilayer stack and a capping layer positioned above the uppermost surface of the multilayer stack.

Method of using an EUV mask during EUV photolithography processes

EUV mask for use during EUV photolithography processes

Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C),boron nitride (BN), boron carbide (BC), silicon nitride (SiN), silicon carbide (SiC), B, Pd, Ru, Rh, Au,MgF, LiF, CFand TiNand compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics.

Capping layer for EUV optical elements

An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or silicide compound or mixture thereof may be used for example.

Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method

An embodiment of the invention provides a method to clean a surface. The method includes at least partly liberating contaminants from the surface with a contaminant liberating device, and capturing the contaminants that have been at least partly liberated with a contaminant removal device, the contaminant removal device generating at least one optical trap to trap the contaminants that have been at least partly liberated. Embodiments of the invention also provide a device manufacturing method, a method to clean a surface of an optical element, a cleaning assembly and cleaning apparatus, and a lithographic apparatus.

Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus

A lithographic apparatus that includes at least one optical surface exposed to a radiation beam, and a surface plasmon resonance measurement apparatus adjacent the optical surface that is configured to detect contamination of at least one optical surface of the lithographic apparatus. The measurement apparatus is located near or in close proximity to the optical surface to as to emulate and determine possible contamination without interfering with the radiation beam used to expose the optical surface. A radiation source for the measurement apparatus is configured to provide a probing beam of radiation having an angle of incidence. By measuring the surface plasmons and/or the angles of incidence of a reference optical surface in the measurement apparatus, contamination deposited on an optical surface in the lithographic apparatus may be inferred.

Apparatus and method for detecting contamination within a lithographic apparatus

A lithographic apparatus is provided with a measurement apparatus constructed and arranged to use surface plasmon resonance to detect contamination of a surface within the lithographic apparatus.

Lithographic apparatus and method

A reflector for EUV has additional multi-layers on the front surface of a base multilayer stack provided selectively to compensate for figure errors in the base multilayer stack or the substrate on which the multilayer stack is provided. A reflective mask for EUV uses two multilayer stacks, one introducing a relative phase shift and/or altered reflectivity with respect to the other one.

Lithographic apparatus, device manufacturing methods, devices manufactured thereby, method of manufacturing a reflector, reflector manufactured thereby and phase shift mask

The reflectivity of multilayered EUV mirrors tuned for 11-16 nm, for which the two-component Mo/Be and Mo/Si multilayered systems are commonly used, is enhanced by incorporating additional elements and their compounds mainly from period 5 of the periodic table. In addition, the reflectivity performance of the multilayer stacks is further enhanced by a numerical global optimization procedure by which the layer thicknesses are varied for optimum performance in, contradistinction to the constant layer thickness&mdash;i.e. constant partition ratio&mdash;multilayer stacks commonly designed and, fabricated hitherto. By incorporating additional materials with differing complex refractive indices in various regions of the stack, or by wholly replacing one of the components (typically Mo), we have observed peak reflectivity enhancements of up to 5% for a single reflector compared to a standard unoptimized stack.

Multilayer extreme ultraviolet mirrors with enhanced reflectivity

Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B C), silicon nitride (Si N ), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF , LiF, C F and TiN and compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics.

The reflectivity of multilayered EUV mirrors tuned for 11-16 nm, for which the two-component Mo/Be and Mo/Si multilayered systems are commonly used, is enhanced by incorporating additional elements and their compounds mainly from period 5 of the periodic table. In addition, the reflectivity performance of the multilayer stacks is further enhanced by a numerical global optimization procedure by which the layer thicknesses are varied for optimum performance in, contradistinction to the constant layer thickness&mdash;i.e. constant partition ration&mdash;multilayer stacks commonly designed and fabricated hitherto. By incorporating additional materials with differing complex refractive indices in various regions of the stack, or by wholly replacing one of the components (typically Mo), peak reflectivity enhancements of up to 5% for a single reflector are achieved, compared to a standard unoptimized stack. The additional materials used are: Rb, RbCl, Sr, Y, Zr, Ru, Rh, Tc, Pd, Nb and Be. Protective capping layers of B, Ru, Rh, C, Si3N4, SiC, are disclosed.

Growing community of inventors

Delft, Netherlands

Mandeep Singh