Iwatani Corporation

Iwatani Sangyo Kabushiki Kaisha (iwatani International Corporation)

Manabu Saeda

Kunihiko Koike

Yu Yoshino

Toshiki Manabe

Chitoshi Nogami

Hideki Odajima

Masanori Suzuki

Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClFin a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage () and a gas discharge passage () to a processing chamber () of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber () and the gas supply passage () among the processing chamber (), the gas supply passage (), and the gas discharge passage (), which are integrally formed, to coat the inner surfaces of at least the processing chamber () and the gas supply passage () with a fluoride film.

Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride

When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.

Non-plasma cleaning method for semiconductor manufacturing apparatus

Growing community of inventors

Moriyama, Japan

Manabu Saeda