Tokyo Electron Limited

Manabu Hama

Takahiro Kitano

Shinichi Sugimoto

Tadashi Onishi

Naoya Hirakawa

Mitsuaki Iwashita

Minoru Honda

Kazuyuki Mitsuoka

Naoyuki Satoh

Takeshi Tamura

Hiroyuki Ide

A substrate processing apparatus is used for radiating UV rays onto a target film formed on a target surface of a substrate to perform a curing process of the target film. The apparatus includes a hot plate configured to heat the substrate to a predetermined temperature, a plurality of support pins disposed on the hot plate to support the substrate, and a UV radiating device configured to radiate UV rays onto the target surface of the substrate supported on the support pins. The support pins are preset to provide a predetermined thermal conductivity to conduct heat of the substrate to the hot plate. The hot plate is preset to have a predetermined thermal capacity sufficient to absorb heat conducted through the support pins.

Substrate processing apparatus and method

The invention includes a hermetic container provided with a substrate mount; a vacuum exhauster connected to the hermetic container; a current member; and a current member raising and lowering mechanism. When the current member is raised and lowered as a function of the pressure inside the hermetic container, a liquid flow of the coating solution on the substrate is controlled, thereby controlling the uniformity of the film thickness of the coating solution.

Reduced-pressure drying unit and coating film forming method

In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

Thin film processing method and system

A film-processing method according to the present invention includes: a processing step of irradiating electron beams onto a film on a surface of an object to be processed to conduct a process to the film; an electric-current measuring step of capturing the electron beams in a vicinity of the object to be processed to measure an electric-current value during the processing step; and a detecting step of detecting an end point of the process to the film, based on an amount of electron obtained by means of a time integration of the electric-current value. According to the present invention, a suitable irradiation of the electron beams onto the film on a surface of the object to be processed can be realized. Thus, a suitable film quality can be obtained.

Film-processing method and film-processing apparatus

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Kumamoto, Japan

Manabu Hama