Nec Corporation

Nippon Electric Co., Ltd.

Sumitomo Electric Industries, Limited

Manabu Bonkohara

Kenichi Tokuno

Hidetoshi Takeda

Naoji Senba

Kouichi Takekawa

Yuzo Shimada

Kazuaki Utsumi

Masaru Saito

Akihiro Dohya

Satoru Okamoto

Kenichi Otake

Seiichi Nishino

Ikushi Morizaki

Kazuaki Utumi

Yuuzou Shimada

Hisao Kasuga

Kazufumi Terazi

Akihiro Doya

Ikushi Morisaki

In a semiconductor package stack module, an LSI (Large Scale Integrated circuit) is mounted, via fine bumps, on a ceramic carrier substrate or a flexible carrier film on which wiring conductors are formed. After a seal resin has been injected, the chip is thinned by, e.g., grinding. A plurality of such carrier substrates or carrier films are connected to each other by bumps via through holes which are electrically connected to the wiring conductors, thereby completing a tridimensional stack module. The module achieves a miniature, thin, dense, low cost, and reliable structure without resorting to a wire bonding system or a TAB (Tape Automated Bonding) system. In addition, the module has a minimum of wiring length and a desirable electric characteristic.

Semiconductor packing stack module and method of producing the same

A first bump is arranged on an electrode of a semiconductor chip. An opening portion formed at a position corresponding to an electrode on the semiconductor chip, a conductive lead subjected to patterning and arranged in the opening portion, and a second bump for being connected to the outside of the device are formed on a flexible substrate, and the conductive lead and the first bump are connected to each other in the opening portion. An external shape of the flexible substrate is approximately the same as that of the semiconductor chip.

Semiconductor device

A stack module is provided which relieves thermal stress generated in a heat-radiating element and provides improved cooling efficiency. Connection bumps of a plurality of mounting substrates, onto which are mounted semiconductor chips are used to stack the substrates to four levels, three wave-shaped heat-radiating elements, made of copper, being in thermal contact between the semiconductor chips of three of the mounting substrates and the rear surfaces of three of the mounting substrates, making use of the spring elasticity of the heat-radiating elements to establish this thermal contact.

Stack module

A chip carrier semiconductor device comprises a semiconductor chip having a surface on which a plurality of contact pads, a tape carrier overlying the semiconductor chip and a plurality of leads provided on the tape carrier to overly the semiconductor chip, each of the leads having an inside end being provided with at last one bump for bonding a board, the bump being positioned on an inside area of the contact pads.

Chip carrier semiconductor device assembly and a method for forming the

Solder balls are attached to a flexible printed-circuit board which is shaped so as to be able to cover at least an upper surface, a side surface, and a lower surface of an IC chip, and the flexible printed-circuit board is placed on the IC chip. Then, the flexible printed-circuit board is folded over edges of the IC chip, and bonded to outer surfaces of the IC chip by an adhesive sheet. Thereafter, a sealing resin is poured into a gap between the upper surface of the IC chip and the flexible printed-circuit board, and cured, thereby completing a semiconductor package.

Semiconductor package with flexible board and method of fabricating the

A device module with a circuit chip and a print-circuit substrate on which a pattern of grooves is formed by selective etching. A liquid sealing material is in the space between the circuit chip and the surface of the substrate, fixing the circuit chip on the surface of the substrate. The circuit chip has a plurality of electrodes arranged in a first pattern, and the substrate has a plurality of connection terminals arranged in the first pattern within a chip mounting area on a surface thereof. Each of the grooves passes between two adjacent connection terminals through the chip mounting area, and both ends of each groove protrudes from the periphery of the chip mounting area. After the circuit chip is placed on the chip mounting area with the respective electrodes corresponding to the connection terminals, a liquid sealing material may be spread more easily into the space between the circuit chip and the substrate by the use of capillary action to provide a more reliable and efficient seal.

Device module comprising a substrate having grooves fixed to circuit

Chip carrier semiconductor device assembly

A multichip module packaging structure provided over a mother board. A multichip module substrate is mounted over the mother board through a frame member. The frame member is provided to extend successively on a peripheral region of a bottom surface of the substrate and further extend downward from the bottom surface of the substrate. The frame member also has a top portion bonded with the bottom surface of the substrate and a bottom portion bonded with the top surface of the mother substrate so as to form a three dimensional space surrounded by the frame member, the substrate and the mother board. A plurality of semiconductor integrated circuit chips are provided on the bottom surface of the substrate so that the chips are accommodated within the three dimensional space.

High density multichip module packaging structure

The present invention relates to a semiconductor casing which permits transmitting ultraviolet rays to a semiconductor chip within the casing. The semiconductor casing includes the substrate formed by a thin metal plate for mounting the semiconductor chip, a ceramic frame fixed to the periphery of the substrate, a ceramic cap which covers the semiconductor chip, is mounted on the ceramic frame and allows transmission of ultraviolet rays, and leads which are sandwiched between the ceramic frame and the ceramic cap to allow the electrical connection of the semiconductor chip.

A method of manufacturing a semiconductor device employing a film carrier tape during process steps thereof is disclosed. Any test pad is not provided in the film carrier tape. Therefore, the semiconductor element carried in the film is cut at the leads and separated from the film carrier tape without conducting any electrical test. The separated semiconductor element is conducted the electrical test by installing it on a testing substrate which is provided to adapt to a large number of terminals.

Method of manufacturing semiconductor device

A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, first and second lead elements associated with the conductive support member, a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on the conductive support member, an electrically conductive layer on the first insulating layer, and a second insulating layer on the conductive layer, the conductive layer having a portion exposed by the second insulating layer, a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, the second insulating layer intervening between the conductive layer and the semiconductor integrated circuit chip, a bonding wire electrically connecting the first electrode to the first lead element, and a bonding wire electrically connecting the second electrode to the exposed portion of the conductive layer and to the second lead element. The dielectric material forming the first insulating layer provides a capacitor between the first and second electrodes on the semiconductor integrated circuit chip.

Capacitor built-in integrated circuit packaged unit and process of

In a framed lead assembly for a semiconductor element, conductive lead strips comprising inward end portions for connection to electrode areas of the semiconductor element are supported to a frame by reinforcing strips of an insulating material made integral with at least center portions of the respective lead strips and a connection arrangement connecting the reinforcing strips with the frame. The connection arrangement may comprise those outward end regions of the respective reinforcing strips which are made integral with the frame of the insulating material and those outward end areas of the respective lead strips which are attached to the frame. The reinforcing strips may be connected together by bridge members of either the insulating material or another insulating material. Alternatively, the connection arrangement may comprise bridge members connecting the reinforcing strips together and supporting members connecting the bridge members with the frame with outward end portions of the lead strips either separated from the frame or having outward end areas extended further outwardly of the respective outward end portions and attached to the frame. Preferably, the frame and the bridge and supporting members are of the insulating material and made integral with one another with the outward end portions being not made integral with the reinforcing strips. Also preferably, the inward end portions are not made integral with the reinforcing strips in whichever structure of the connection arrangement.

Framed lead assembly for a semiconductor device comprising insulator

A fine wire made of a gold alloy for use in a semiconductor device. The alloy consists essentially of at least one control element selected from the group consisting of carbon in an amount of 1 to 25 wt. ppm., silicon in an amount of 1 to 25 wt. ppm., germanium in an amount of 3 to 30 wt. ppm., tin in an amount of 5 to 30 wt. ppm., and lead in an amount of 5 to 30 wt. ppm.; with balance gold of a purity of more than 99.995 wt.

Growing community of inventors

Tokyo, Japan

Manabu Bonkohara