Tokyo Electron Limited

Covalent Materials Corporation

Manabu Amikura

Teruo Iwata

Eiichi Komori

Daisuke Toriya

Hiroo Kawasaki

Kazuo Shibata

Toshiki Hinata

A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.

Film forming apparatus

A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.

A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

Substrate processing apparatus

To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member. Connection wiresandconnected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wiresandconnected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.

Plane heater

The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (). In the showerhead body, there are defined a first diffusion chamber () that receives the source gas and diffuses the same, and a second diffusion chamber () that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (A).

Shower head and film-forming device using the same

A thermal processing system has a processing vessel, a support poststood on the bottom wall of the processing vessel, and a support tableinternally provided with a heating meansand supported on the support post. A workpiece W is placed on the upper surface of the support tableand is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support tableare covered with heat-resistant covering membersandto prevent the thermal diffusion of metal atoms causative of contamination from the support table. thus, various types of contamination, such as metal and organic contamination, can be prevented.

Loading table and heat treating apparatus having the loading table

A shower head structure () includes a shower head main body () of a one-piece structure formed in a generally cup shape and having a bottom wall (A) provided with a plurality of gas injection holes (A,B) formed therein and a side wall (B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (A-C) are housed in the shower head main body (). A through-hole is formed in a head mounting frame () disposed on a ceiling of a processing vessel (). An upper portion of the side wall (B) of the shower head main body () is inserted into the through-hole, so that a part of the side wall (B) is exposed to the exterior of the processing vessel. A cooling mechanism () is disposed at the upper end portion of the side wall (B). Heat transfer between the cooling mechanism () and the bottom wall (A) is enhanced, so that the temperature of the bottom wall (A) can be controlled at a proper value, thereby preventing any adhesion of an unnecessary film onto the bottom wall (A).

Growing community of inventors

Nirasaki, Japan

Manabu Amikura