Sumitomo Osaka Cement Co., Ltd.

Tokyo Electron Limited

Mamoru Kosakai

Yukio Miura

Kazunori Ishimura

Shinichi Maeta

Yasuharu Sasaki

Keisuke Maeda

Hitoshi Kouno

Ryuuji Hayahara

Hiroshi Inazumachi

Takashi Satou

Keigo Maki

Takeshi Watanabe

Shinji Himori

Shoichiro Matsuyama

Nobuhiro Hidaka

Hironori Kugimoto

Takeshi Ootsuka

Masaki Ozaki

Toshiyuki Makabe

Atsushi Matsuura

Kei Furuuchi

Kenji Masuzawa

Takashi Sato

Tomoyuki Takahashi

Takeshi Otsuka

Nobuyuki Nagayama

Yoshiaki Moriya

Takehiro Ueda

Kentaro Takahashi

Kaoru Oohashi

Yuhki Kinpara

Tadashi Aoto

Kazuto Ando

Tomomi Ito

Taketoshi Okajo

Yuuki Kinpara

Yusuke Nakagawa

Kazunori Endou

Naoto Kimura

Teruyasu Fujita

An electrostatic chuck device includes: an electrostatic chuck part having a sample placing surface on which a sample is placed and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample placing surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the electrostatic chuck part has a recess and protrusion on the adhesive layer side, and a sheet resistance value of the first electrode is higher than 1.0Ω/□ and lower than 1.0×10Ω/□.

Electrostatic chuck device

An object of the present invention is to reduce non-uniformity of etching in a plane of a wafer. An electrostatic chuck device includes: an electrostatic chuck part having a sample mounting surface on which a sample is mounted and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample mounting surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the cooling base part has a function of a second electrode that is an RF electrode, a third electrode for RF electrode or LC adjustment is provided between the electrostatic chuck part and the cooling base part, and the third electrode is bonded to the electrostatic chuck part and the cooling base part and insulated from the cooling base part.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

Ceramic substrate and susceptor

An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5&#xd7;10&#x3a9;cm or more in the entire range from 24&#xb0; C. to 300&#xb0; C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24&#xb0; C. to 300&#xb0; C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less.

Electrostatic chuck device and method for manufacturing electrostatic chuck device

An electrostatic chuck device includes: an electrostatic chuck part which incorporates an internal electrode for electrostatic attraction and has a placing surface on which a plate-like sample is placed; a base part which cools the electrostatic chuck part; and an adhesion layer which bonds the electrostatic chuck part and the base part to integrate the parts together, in which a first through-hole is provided in the electrostatic chuck part, a second through-hole that communicates with the first through-hole is provided in the base part, a tubular insulator is fixed in the second through-hole, an annular sealing member is sandwiched between the electrostatic chuck part and a distal end surface of the insulator, wherein the distal end surface is located on the electrostatic chuck part side of the insulator, and a tubular insulating wall member is located at the inner side of the sealing member in the radial direction.

An electrostatic chuck device includes: a placing plate having a placement surface on which a plate-like sample is placed on one side thereof; an electrostatic attraction electrode provided on the other side of the first ceramic plate; and a first organic insulating layer provided between the first ceramic plate and the electrostatic attraction electrode. The electrostatic chuck device further has a supporting plate provided between the first organic insulating layer and the electrostatic attraction electrode.

A plate-shaped body for temperature measurement which, simply by being mounted on a mounting surface of an electrostatic chuck apparatus and without using a semiconductor wafer itself, is able to easily optimize the in-plane temperature distribution of the mounting surface of the electrostatic chuck apparatus, the temperature rising characteristics, and the cooling characteristics during decreases in temperature. In such plate-shaped body for temperature measurement (), an insulating adhesive () is bonded to the entirety of a surface () of a wafer (), a heater element () is provided on the insulating adhesive (), a temperature measurement region () is provided used to measure the temperature of the surface () of the wafer () in a region excluding the heater element () on the surface () of the insulating adhesive (), and the heater element () and the temperature measurement region () are coated with an insulating film ().

Plate-shaped body for temperature measurement and temperature measuring apparatus provided with the same

An aspect of the present invention has an object to provide an electrostatic chuck device which is provided with a plurality of divided heaters and in which uniform temperature control of a zone which is heated by each heater can be performed with a simple configuration. An electrostatic chuck device according to an aspect of the present invention includes: an electrostatic chuck part which has a mounting surface on one principal surface thereof to mount a plate-shaped sample and has an electrode for electrostatic attraction; a temperature controlling base part which is provided at a side opposite to the mounting surface of the electrostatic chuck part and is configured to cool the electrostatic chuck part; a high frequency generating electrode which is provided in a layer between the electrostatic chuck part and the temperature controlling base part; a high frequency power source which is connected to the high frequency generating electrode; a first heater element which is configured with a plurality of main heaters which are provided in a layer between the high frequency generating electrode and the temperature controlling base part; and a guard electrode which is provided in a layer between the high frequency generating electrode and the first heater element.

An electrostatic chuck part of an electrostatic chuck device has an electrostatic chuck part inner peripheral surface surrounding an opening of a chuck part through-hole, and an electrostatic chuck part outer peripheral surface surrounding the electrostatic chuck part inner peripheral surface. An insulator has an insulator main body in which an insulator through-hole having an opening on the electrostatic chuck part side is formed, an insulator inner end face, and an insulator outer end face which faces the electrostatic chuck part outer peripheral surface. The insulator inner end face and the electrostatic chuck part inner peripheral surface are in contact with each other, or an adhesion layer or a plasma-resistant adhesive layer extends in a gap between the insulator inner end face and the electrostatic chuck part inner peripheral surface. The plasma-resistant adhesive layer is formed between the electrostatic chuck part outer peripheral surface and the insulator outer end face.

Electrostatic chuck device, and semiconductor manufacturing device

An electrostatic chuck device includes an electrostatic chuck member and a temperature controlling base member. The electrostatic chuck member has a ceramic plate having a mounting surface on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction provided on the other surface on the side opposite the mounting surface of the ceramic plate. The temperature controlling base member is disposed on the surface on the side opposite the ceramic plate side of the electrode for electrostatic attraction and cools the electrostatic chuck member. The ceramic plate has a dike portion which extends to the temperature controlling base member side and surrounds the electrode for electrostatic attraction, the temperature controlling base member has a groove portion accommodating an end part of the dike portion, and a space between the groove portion and the dike portion is filled with a filling part formed of a resin material.

An electrostatic chuck device according to the present invention includes: an electrostatic chuck portion having a placement surface on which a plate-like sample is placed; a base portion for temperature adjustment disposed in opposition to the side of the electrostatic chuck portion on the opposite side from the placement surface; a bonding portion for bonding the electrostatic chuck portion and the base portion for temperature adjustment together; and an annular focus ring surrounding the periphery of the placement surface, in which the volume of a space surrounded by the electrostatic chuck portion, the focus ring, the bonding portion, and a dam portion of the base portion for temperature adjustment is greater than the amount of volume expansion of the bonding portion at the working temperature.

Provided is an electrostatic chucking device having high heat resistance. The electrostatic chucking device of the present invention includes a first ceramic plate which includes a first surface on which a substrate is able to be placed and a second surface on the opposite side thereof, and in which an internal electrode for electrostatic adsorption is embedded; a heating member fixed to the second surface; a second ceramic plate adhered to the first ceramic plate and the heating member via a first adhesive layer; and a cooling base portion adhered to the second ceramic plate via a second adhesive layer and cools at least the second ceramic plate. The first adhesive layer has a higher heat resistance than the second adhesive layer. The second adhesive layer has a smaller Young's modulus than the first adhesive layer.

Electrostatic chucking device

Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Electrostatic chuck apparatus

An electrostatic chuck device is provided in which there is no concern that a plate-shaped sample may be deformed when adsorbing the plate-shaped sample or when detaching the plate-shaped sample, the temperature of the plate-shaped sample is uniformized, and particles are not easily produced. In an electrostatic chuck deviceprovided with an electrostatic chuck sectionwhich has a placement plate, an upper surfaceof which is a placement surface on which a plate-shaped sample W such as a semiconductor wafer is placed, a support plateintegrated with the placement plate, and an internal electrode for electrostatic adsorptionand an insulating material layerwhich are provided between the placement plateand the support plate, an annular projection portionis provided at a peripheral border portion on the upper surface, a plurality of projection portionshaving the same height as the height of the annular projection portionare provided in an area surrounded by the annular projection portionof the upper surface, and an upper end portion of the annular projection portionand an upper end portion of each of the plurality of projection portionsare located on a concave surfacewith a central portion of the upper surfaceas a basal plane.

An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Growing community of inventors

Tokyo, Japan

Mamoru Kosakai