Joled Inc.

Mami Nonoguchi

Hiroshi Hayashi

Toshiaki Yoshitani

Tomoaki Izumi

A thin film semiconductor device comprises a substrate, a gate electrode disposed above the substrate, an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode, a channel protective layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode each connected to the oxide semiconductor layer. The density of states DOS [eVcm] of oxygen defects in the oxide semiconductor layer satisfies the following relationship:DOS&#x2266;1.710&#xd7;10&#xd7;()&#x2212;6.468&#xd7;10&#xd7;()+6.113&#xd7;10provided that 2.0 eV&#x2266;Ec&#x2212;E&#x2266;2.7 eVwhere Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer.

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Hyogo, Japan

Mami Nonoguchi