Kabushiki Kaisha Toshiba

Makoto Nakase

Koji Asakawa

Toru Ushirogouchi

Naomi Shida

Takeshi Okino

Takuya Naito

Shinichi Ito

Takashi Sato

Hiroaki Hazama

Naoko Kihara

Haruki Komano

Yoko Tomofuji

Satoshi Saito

Yoshihiko Nakano

Akihiro Nitayama

Shuji Hayase

Hirotsugu Wada

Hirokazu Niki

Haruo Okano

Rumiko Hayase

Akira Yoshizumi

Masayuki Oba

Yoshiaki Kawamonzen

Toshiaki Shinozaki

Akinori Hongu

Hiromitsu Wakabayashi

Kouji Hashimoto

Toru Ushirogochi

Kunihiro Ikari, Deceased

Kouji Hishimoto

Shinishi Ito

Alicycli c group-containing monomer

A monomer represented by the following general formula (m-1):

Monomer, high molecular compound and photosensitive composition

A photosensitive composition comprising a polymer having a repeating segment represented by the following general formula (1A) and a compound which is capable of generating an acid by irradiation of an actinic radiation.

Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts

A photosensitive material, which comprises, an alkali-soluble resin moiety having an alicyclic skeleton, a polycyclic condensation skeleton, or both alicyclic and polycyclic condensation skeletons, and a diazo compound moiety. The diazo compound moiety may be contained in a side chain of the alkali-soluble resin moiety or included in the photosensitive material in separate from the alkali-soluble resin moiety.

Photo-sensitive material, method of forming a resist pattern and manufacturing an electronic parts using photo-sensitive material

Disclosed is a method of forming a pattern on a substrate, comprising a step of forming a light-sensitive layer containing an aromatic compound on a substrate, a step of patternwise exposing the light-sensitive layer with a light having a wavelength range shorter than the maximum wavelength in the third absorption band from the long-wave side in the absorption spectrum of the aromatic compound and longer than the maximum wavelength in the fourth absorption band from the same, thereby to cause a photochemical reaction in the light-sensitive layer, and a step of developing the exposed light-sensitive layer, optionally after heat-treating the layer, so as to selectively remove the exposed area of the layer or leave the area as it is. The method gives a pattern having a high resolving power and an excellent dry-etching resistance.

Method of forming patterns

A photosensitive composition comprising, an oligomer having a backbone chain comprising an alicyclic skeleton and/or a conjugated polycondensed aromatic skeleton, the backbone chain being acid-decomposable or hydrolyzable, and a photo-acid-generating agent.

Transparent resin, photosensitive composition, and method of forming a

A photosensitive material which is very low in absorption of a light source of short wavelength and excellent in dry etch resistance. This photosensitive material comprises a compound having a terpenoid skeleton. Preferably, the compound having a terpenoid skeleton is a compound having a monovalent menthyl group or menthyl derivative group which can be represented by the general formula (1). ##STR1## wherein R is a hydrogen atom or a monovalent hydrocarbon group, R.sup.1 may be the same with or different from each other and individually represents a hydrogen atom, a halogen atom, a hydrocarbon group, a hydroxyl group, an alkoxyl group, an amino group, an alkoxy group, an amino group, an imide group, an amide group, or a sulfonyl group, a carboxyl group, a carbonyl group, or a sulfonamide group, and a pair of neighboring R.sup.1 may be connected together to form a closed ring.

Photosensitive material

A photosensitive composition contains an acid-decomposable resin, a photo-acid-generating agent, and a naphthol novolak compound with a molecular weight of 2000 or less. The acid-decomposable resin is preferably a copolymer consisting of a polymerizable compound having an alicyclic skeleton as a monomer.

Photosensitive composition

A resist for alkali development, which comprises an alicyclic compound attached with an acidic substituent group exhibiting pKa of 7 to 11 in an aqueous solution of 25.degree. C. This alicyclic compound is preferably a copolymer comprising as a comonomer component a vinyl compound and exhibiting a light absorbency of 3 or less per 1 .mu.m to the light of 193 nm in wavelength.

Resist for alkali development

Disclosed is a method of forming a pattern on a substrate, comprising a step of forming a light-sensitive layer containing an aromatic compound on a substrate, a step of patternwise exposing the light-sensitive layer with a light having a wavelength range shorter than the maximum wavelength; in the third absorption band from the long-wave side in the absorption spectrum of the aromatic compound and longer than the maximum wavelength in the fourth absorption band from the same, thereby to cause a photochemical reaction in the light-sensitive layer, and a step of developing the exposed light-sensitive layer, optionally after heat-treating the layer, so as to selectively remove the exposed area of the layer or leave the area as it is. The method gives a pattern having a high resolving power and an excellent dry-etching resistance.

Method of photoetching at 180 to 220

A photosensitive composition for forming a pattern through a light-exposure with either one of ArF excimer laser and F.sub.2 excimer laser, which comprises a compound having either an acid-decomposable or acid-crosslinkable group, and a compound represented by the following general formula (1): ##STR1## wherein Ar.sup.1 and Ar.sup.2 are individually an aromatic ring or condensed aromatic ring, R.sup.1 and R.sup.2 are individually halogen atoms or monovalent organic group, X is a group selected from the group consisting of CF.sub.3 SO.sub.3, CH.sub.3 SO.sub.3, CF.sub.3 COOH, ClO.sub.4, SbF.sub.6 and AsF.sub.6, Z is a group selected from the group consisting of Cl, Br, I, S--R and Se--R (R is an alkyl group having 1 to 10 carbon atoms or perfluoroalkyl group having 1 to 10 carbon atoms), and m and n are 0 or a positive integer.

Photo-sensitive composition

There is disclosed a color developing resin composition comprising a base polymer, a dialdehyde represented by the general formula OHC--R.sup.1' --CHO, a diamine represented by the general formula H.sub.2 N--R.sup.2' --NH.sub.2 (at least one of R.sup.1' and R.sup.2' is an aromatic group), a compound which produces an acid by light irradiating and a resin which is crosslinked with the acid.

Color developing organic material, color developing resin composition

In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.

Reticle

A resist comprising a sulfonyl compound represented by the following general formula (1): ##STR1## wherein R.sup.1 is a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.2 is a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.3 is a bivalent organic group, and n is an integer of 2 or more. The R.sup.3 in the general formula (1) is preferably a bivalent organic group represented by the general formula (2): ##STR2## wherein R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25 and R.sup.26 may be the same or different and are individually a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, and Z is a bivalent organic group.

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Tokyo, Japan

Makoto Nakase