Shin-Etsu Handotai Co., Ltd.

Kabushiki Kaisha Toshiba

Nikon Corporation

Other

Makoto Kobayashi

Fumihiko Hasegawa

Soichi Inoue

Tadahito Fujisawa

Tsuneyuki Hagiwara

Fumio Suzuki

Kenichi Kodama

Masashi Ichikawa

Masanori Tanaka

Hisashi Masumura

Masahiro Sakurada

Tatsuya Shinoda

Hidekazu Yamamoto

Syuichi Kobayashi

Yasuaki Murashi

Masahiro Murata

Teruaki Fukami

Koichi Kanaya

Shinroku Maejima

Kazuhito Matsukawa

Tsutomu Takaku

Koichi Takeshita

Mamoru Okada

Tameyoshi Hirano

According to one embodiment, a battery includes an external container, an electrode group, and a sealing plate. The electrode group includes a positive electrode and a negative electrode wound in a flat shape with an insulating layer interposed therebetween. Thicknesses Tof the positive and negative electrodes are each from 0.03 mm to 0.08 mm. A first direction is orthogonal to a winding axis direction of the electrode group. A second direction is parallel to the winding axis direction. The thicknesses Tof each electrode, a thickness Tof the electrode group in the third direction orthogonal to the first and second directions, and an innermost circumferential height Hof the electrode group in the first direction satisfy 0.02≤(T×T)/H≤0.04.

Battery and battery pack

A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L, a radial direction reference L, an intersection point P, a height reference plane L, h[&#x3bc;m], h[&#x3bc;m], a point Px, a straight line Lx, an angle &#x3b8;x, a point Px, &#x3b4; [&#x3bc;m], a point Px, and a radius Rx [&#x3bc;m], the edge shape of the silicon wafer is measured, values of the shape parameters h, h, and &#x3b4; are set, the shape parameters Rx and &#x3b8;x are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and &#x3b8;x to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.

Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereof

There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method

The present invention provide a method for manufacturing an SOI wafer which suppresses voids from being generated in an SOI wafer, especially, in an outer peripheral portion thereof to achieve high productivity. According to the present invention, in a method for manufacturing an SOI wafer in which an insulating layer is formed on at least one of two wafers serving as starting wafers, and the wafer is bonded to the other wafer without an adhesive, a wafer having such an outer peripheral configuration that a configuration change width is 0.1 &#x3bc;m or less in a region of between 10 mm and 3 mm away from the outer periphery is used as the starting wafer.

Method for manufacturing SOI wafer

Disclosed herein is a moving-picture editing apparatus that comprises a display device and a controller. The display device has a display screen and can display the frames forming a moving picture, on the display screen in the form of a frame matrix based on the frame rate and display unit time. The controller determines a number of rows and a number of columns in which to display the frames, in accordance with a frame rate and a display unit time, and controls the display device, causing the same to display the frames in rows and columns the numbers of which have been determined.

Method and apparatus for editing video data

A method for evaluating a wafer configuration includes: obtaining plural wafer configuration profiles from a central wafer portion to an edge portion along the entire periphery at a prescribed angular space; providing a first region for calculating a reference line for each profile in the central side of the wafer; calculating the reference line in the first region; providing a second region in the peripheral side of the wafer outside the first region; extrapolating the reference line calculated in the first region to the second region; analyzing a value obtained by subtracting the reference line value in the second region from an actually measured value in the second region; calculating the maximum value among the values as a surface characteristic and the minimum value among the values as a surface characteristic; and, evaluating configuration uniformity in the peripheral portion of the wafer from plural surface characteristics and surface characteristics.

Method for evaluating wafer configuration, wafer, and wafer sorting method

There are provided a method and an apparatus for evaluating a wafer configuration which can accurately evaluate a peripheral portion of a wafer as compared with the conventional SFQR or the like, which comprises: measuring a configuration of a wafer at positions with a prescribed space within a surface of the wafer; providing a first region (W ) within the wafer surface for calculating a reference line or a reference plane from the measured wafer configuration; calculating a reference line ( ) or a reference plane ( ) in the first region (W ); providing a second region (W ) to be evaluated outside the first region; extrapolating the reference line ( ) or reference plane ( ) to the second region (W ); analyzing a difference between the configuration of the second region and the reference line or reference plane within the second region; and calculating the analyzed difference as surface characteristics.

Wafer shape evaluating method and device producing method, wafer and wafer selecting method

A plurality of radio devices having a radio communication function establish a radio connection therebetween by exchanging their identifiers, and then exchange their information. Each radio device receives the identifier of another radio device as a destination via a radio device control terminal, and establishes a radio connection without requiring much time and effort of the user when connecting the radio devices. When the radio device control terminal has detected radio devices (stations) in a communicable area (where radio connection can be established) set by its radio communication function, it displays the detected radio devices as targets of radio connection establishment on its coordinate-input-enabled display section. When the user has designated the establishment of a connection between the radio devices on the display section, identifiers necessary for establishing a radio connection between the radio devices are transmitted thereto.

Radio device control terminal apparatus, radio system and multimedia system constitution method

There is disclosed a polishing pad for mirror-polishing a semiconductor wafer, especially in a finish polishing process, by use of a polishing machine which includes a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad. The polishing pad includes a top layer formed of a porous soft material, a bottom layer formed of a rubber elastomer, and an intermediate layer formed of a hard plastic sheet. The hard plastic sheet is disposed between the top layer and the bottom layer and is bonded to the bottom layer. In the polishing pad, undulation produced in the bottom layer due to a horizontal force generated during polishing is prevented from being transferred to the top layer of the polishing pad, and unevenness in polishing stock removal stemming from warpage or undulation of a wafer itself can be mitigated.

Polishing pad, polishing method, and polishing machine for mirror-polishing semiconductor wafers

A workpiece holding mechanism is used for holding a wafer. The wafer is sandwiched between a holding plate of the workpiece holding mechanism and a polishing pad attached to a polishing turn table. The workpiece is pressed against the polishing pad with a predetermined pressure so that the bottom surface of the wafer is polished. Water is confined within a fluid confinement space defined between an elastic membrane and the holding plate so as to press the wafer via the elastic membrane. There is provided a volume adjustment screw that can be advanced toward the fluid confinement space and be retracted therefrom. Through adjustment of the screw, the elastic membrane is caused to have a flat surface, so that the elastic member is in close contact with the entire surface of the wafer. A holding membrane made of polyurethane foam is bonded to the surface of the elastic membrane, and a template is bonded to the surface of the holding membrane so as to improve the holding performance. Accordingly, a uniform pressure can be applied onto the wafer during polishing, and the wafer is prevented from shifting from a desired position even when polishing is performed at a high speed.

Workpiece holding mechanism

An apparatus for mirror-polishing a thin plate, wherein uniformity of tightness in a stretched condition across an elastic film can be achieved and a polishing pressure distribution on the thin plate is uniformalized, so that constant polishing stock removal is realized and high flatness polishing is made possible. In the apparatus, the thin plate is held on a thin plate support mounted on a rotatable press member and the thin plate is pressed to a polishing means by the press member, and the apparatus has features that a holding surface for the thin plate is formed by a flexible elastic film; the elastic film is fastened to the press member or a part mounted thereto in a condition that the elastic film is sandwiched between a spacer and a holding piece; and a pressure, which presses the thin plate held on the elastic film to the polishing means, is adjusted by applying a back pressure to the thin plate with a fluid feed means, while adjusting tightness of the elastic film by the space.

Apparatus for mirror-polishing thin plate

An apparatus for polishing wafers comprising a turn table with a polishing pad fixedly extended thereon, at least one polishing head positioned above a point on the turn table spaced by a distance from its center, a plate mounted on a lower surface of the at least one polishing head, and a carrier, which is used for retaining the wafers, mounted on the plate in a manner such that the carrier is freely rotatable relative to the plate, wherein a backing pad which is used to press the wafers is fixed on the plate and the wafers are rotated around their respective centers, while being revolved around the center of the plate. According to the apparatus, polished wafers with an excellent flatness are obtained in a reliable manner.

Apparatus for polishing wafers

The invention features flattening a sliced wafer in a thin disc-like form, and chamfered if necessary, through simultaneous double side grinding by passing the wafer through between paired cylindrical grinding rolls supported at both ends in bearings, and subsequently single side polishing or double side polishing the flattened wafer to obtain a polished wafer. A lapping step and an etching step in the related art thus can be dispensed with to curtail the process time. The grinding is done by simultaneous double side grinding, so that it is free from slice mark transfer due to vacuum suction of wafer to hold the wafer, or unlike a wax mounting system it does not involve complicated operation. Furthermore, instead of batch grinding, continuous grinding can be readily made. The process is thus free from working stock removal fluctuations and permits high flatness and stable thickness to be obtained by the grinding.

Growing community of inventors

Nishishirakawa-gun, Japan

Makoto Kobayashi