Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Chemical C O., Ltd.

Makoto Kawai

Shoji Akiyama

Yoshihiro Kubota

Atsuo Ito

Yuuji Tobisaka

Koichi Tanaka

Yuji Tobisaka

Kouichi Tanaka

Shigeru Konishi

Yoshihiro Nojima

Hiroshi Tamura

Kazutoshi Nagata

Kazuyoshi Tamura

Shinji Kojima

Keiichi Goto

Masahiro Furuya

Hiroshi Mogi

Toshimi Kobayashi

Ken-ichi Arai

Yoshihiro Kuboto

Ito Atsuo

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90&#xb0; C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.

Method for producing composite wafer having oxide single-crystal film

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof, subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90&#xb0; C. or higher at which cracking is not caused; and applying a mechanical impact to the ion-implanted layer of the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Provided is a composite substrate which is provided with: a single crystal silicon carbide thin filmhaving a thickness of 1&#x3bc;m or less; a handle substratewhich supports the single crystal silicon carbide thin filmand is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100&#xb0; C.; and an intervening layerwhich has a thickness of 1&#x3bc;m or less and is arranged between the single crystal silicon carbide thin filmand the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

Composite substrate, method for forming nanocarbon film, and nanocarbon film

A composite wafer has an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, includes steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90&#xb0; C. or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Provided is a composite wafer (c-wafer) having an oxide single-crystal film transferred onto a support wafer (s-wafer), the film being a lithium tantalate or lithium niobate film, and c-wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and s-wafer. More specifically, provided is a method of producing c-wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer (o-wafer) to form an ion-implanted layer inside thereof; subjecting at least one of the surface of o-wafer and a surface of s-wafer to surface activation; bonding the surfaces together to obtain a laminate; providing at least one of the surfaces of the laminate with a protection wafer having thermal expansion coefficient smaller than that of o-wafer; and heat-treating the laminate with the protection wafer at 80&#xb0; C. or higher to split the laminate along the layer to obtain c-wafer.

The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) () is configured of single crystal silicon and a handle substrate (second layer) () is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.

Heat dissipation substrate and method for producing same

A method for manufacturing a bonded substrate is provided, the bonded substrate including a single-crystal semiconductor substrate on a sintered-body substrate that has small warpage after bonding, has good thermal conductivity and small loss at high-frequency region and is suitable for high-frequency devices. Specifically, the method at least includes: applying coating to all of the faces of a sintered-body substrate, so as to obtain a support substrate including at least one layer of amorphous film; and bonding the support substrate and a single-crystal semiconductor substrate via the amorphous film. On a surface of the amorphous film on the support substrate to be bonded with the single-crystal semiconductor substrate, concentration of each of Al, Fe and Ca by ICP-MS method is less than 5.0&#xd7;10atoms/cm, and surface roughness Rms of the surface of the amorphous film is 0.2 nm or less.

Bonded substrate, method for manufacturing the same, and support substrate for bonding

A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.

Method for producing hybrid substrate, and hybrid substrate

This composite substrate has a single-crystal semiconductor thin film () provided to at least the front surface of an inorganic insulating sintered-body substrate () having a thermal conductivity of at least 5 W/m&#xb7;K and a volume resistivity of at least 1&#xd7;10&#x3a9;&#xb7;cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate () and the single-crystal semiconductor thin film (), a silicon coating layer () comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.

Composite substrate

A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate () and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining an SOS substrate () having a silicon layer () on the sapphire substrate (), by detaching the silicon substrate in the ion-injection region (). This method is characterized in that the orientation of the sapphire substrate () is a C-plane having an off-angle of 1 degree or less.

Method for producing SOS substrates, and SOS substrate

Disclosed is a composite substrate, which is provided with an inorganic insulating sintered substrate, which has a heat conductivity of 5 W/m&#xb7;K or more, and a volume resistivity of 1&#xd7;10&#x3a9;&#xb7;cm or more, and a single crystal semiconductor film, or a composite substrate, which is provided with the inorganic insulating sintered substrate, a single crystal semiconductor film, and a thin layer configured of at least one kind of material selected from among an oxide, a nitride, and an oxynitride, said thin layer being provided between the inorganic insulating sintered substrate and the single crystal semiconductor film. According to the present invention, a low-cost composite substrate with suppressed metal impurity contamination can be provided using an inorganic insulating sintered body, which is opaque to visible light, and which has excellent heat conductivity, and furthermore, a small loss in a high frequency region.

The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.

Method for producing nanocarbon film and nanocarbon film

A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50&#xb0; C. to 350&#xb0; C.; heating the bonded substrates at a maximum temperature from 200&#xb0; C. to 350&#xb0; C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.

SOS substrate having low defect density in vicinity of interface

Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50&#xb0; C. to 350&#xb0; C.; heating the bonded substrates at a maximum temperature of from 200&#xb0; C. to 350&#xb0; C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.

SOS substrate having low surface defect density

There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

Growing community of inventors

Gunma, Japan

Makoto Kawai