Mitsubishi Denki Kabushiki Kaisha

Makoto Hirayama

Shinichi Satoh

Masao Nagatomo

Ikuo Ogoh

Masato Fujinaga

Yoshikazu Ohno

A method for forming a thin film on a semiconductor substrate wherein the substrate is transferred between an auxiliary chamber having an inert atmosphere to a reaction chamber having a reactive atmosphere, and wherein the inert and the reactive atmospheres exist concurrently during transfer.

Method for forming a thin film on a semiconductor device using an

A capacitor includes a lower electrode formed from a layer of silicon or polycrystalline silicon, a single or multi-layer dielectric film such as a nitride film, and an upper electrode formed on the dielectric film. The dielectric film is formed, after a surface layer of the lower electrode has been removed by etching, on a new surface of the lower electrode continuously in a non-oxidizing atmosphere. By this process, formation of an incidental oxide film between the dielectric film and the lower electrode can be prevented. In a direct contact region of the conductive layer, the surface of the contact region is also etched by dry chemical etching, and thereafter the conductive layer is formed in an oxygen-free atmosphere. By doing so, generation of an incidental oxide film having high resistance can be prevented, whereby the contact characteristic can be improved.

Electronic component having improved low resistance contact and

A cell plate (6) is formed on a main surface of a semiconductor substrate (7) with an insulating film (8) interposed therebetween and an interconnection (1) having T-shape cross section is formed on the cell plate (6) with an interlayer insulating film (11) interposed therebetween. An upper insulating film (12) is formed to cover the interconnection (1).

Semiconductor device having interconnection layers of T-shape cross

The present invention comprises a reaction furnace including a fixed capsule having an air atmosphere to be replaced with a predetermined atmosphere, with a semiconductor member to be treated placed therein. A movable capsule initially receives the member and has an atmosphere replaced with a predetermined one before the member to be treated is transferred to the fixed capsule. The movable capsule receives the member at a receiving location and is moved to a delivery location where it is connected to a loading chamber. A method of operating the reaction furnace is also disclosed.

Reaction furnace and method of operating the same

In a heating furnace for forming films on semiconductor substrates (1), holding means (2, 4) for holding semiconductor substrates (1) are provided with projections (3, 5) for holding at least part of bottom faces of the semiconductor substrates (1) horizontally with predetermined spacing between the projections.

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Hyogo, Japan

Makoto Hirayama