Sony Corporation

Siemens Aktiengesellschaft

Fuji Xerox Co., Ltd.

National Institute of Agrobiological Sciences

Tokyo Metropolitan Institute of Medical Science

Makoto Hashimoto

Takeshi Matsushita

Toshiyuki Nishihara

Kazunori Kataoka

Takusei Sato

Tomohiro Wada

Hiroshi Satoh

Yoshiro Okawa

Yasunori Ohokubo

Hisashi Kadota

Hiroshi Komatsu

Motoaki Nakamura

Hiroshi Sato

Masafumi Ono

Isao Ichimura

Takeshi Yamasaki

Kenji Kuroishi

Kazuhiko Narushima

Yuichi Aki

Hiroto Kasai

Ayumu Taguchi

Shingo Makimura

Yoshihiro Miyazawa

Hirohide Fukumoto

Akihiko Ochiai

Machio Yamagishi

Akiko Toriyama

Fumiaki Abe

Hiromi Fukumori

Shigekazu Yamagishi

Tatsuya Minakawa

Setsuko Komatsu

Keiichi Maeda

Muneharu Shimanoe

Tomokazu Koshiba

Kazunari Sekiyama

Yoshiki Takamatsu

Masayo Fujita

Atsuo Yagi

Akio Sekigawa

Ken Ikeda

Hinki Ryu

Shinichiro Sawa

The present invention was accomplished for the purpose of developing a method for effectively treating and/or preventing synucleinopathies, and is based on a discovery that an adiponectin receptor agonist suppresses &#x3b1; (alpha)-synuclein aggregation, tau phosphorylation and a decrease in proteasomal activity. The method of the present invention for treating and/or preventing neurodegenerative diseases includes a step of administering an effective dose of at least one effective element selected from a group consisting of: adiponectin as an adiponectin receptor agonist; a compound inducing expression of adiponectin; globular adiponectin; and a compound inducing expression of globular adiponectin. The present invention further provides a screening method of the adiponectin receptor agonist for treating and/or preventing neurodegenerative diseases.

Method for treating and/or preventing neurodegenerative disease by adiponectin receptor agonist

The invention provides an information processing apparatus including: a plurality of abnormality detection sections provided in each of a plurality of detection target portions, that detect an abnormality caused by high temperature at a predetermined first frequency; an indication detecting section that detects an indication that the abnormality will occur; and a controller that controls to set the detection frequency of the plurality of abnormality detection sections to a second frequency which is higher than the first frequency, when the number of times that the indication is detected within a predetermined period is more than a predetermined number of times.

Abnormality detection frequency set when it is indicated that abnormality will occur

The present inventors succeeded in cloning a rice stress-responsive gene, RSI1. They discovered that stress-responsive plants can be generated by using the isolated gene, or genes functionally equivalent thereto. The present invention is useful in fields such as plant breeding.

Stress-responsive root-specific genes

A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon filmforming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon filmconstituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

Display device, method of production of the same, and projection type display device

A liquid crystal display device having a high quality able to prevent deterioration etc. of a liquid crystal panel even when a liquid crystal panel used in a light valve of a projector etc. is operated under a high temperature and high humidity environment and a projection type display apparatus using the liquid crystal display device, wherein a liquid crystal layeris sandwiched between a pair of substrates formed by bonding a TFT array substrateand a counter substrateby a sealing materialso that they face each other across a predetermined gap, the sealing materialcontains a nonconductive filler having a mean particle size of less than 0.5 &#x3bc;m, a liquid crystal material used in the liquid crystal layeris set in its refractive index anisotropy an at room temperature to 0.16 or more, and a cell gap d of an interval between the TFT array substrateand the counter substrateis set at 3 &#x3bc;m or less.

Liquid crystal display device and projection type display apparatus

A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.

Display and fabricating method thereof

A thin film semiconductor device includes pluralities of signal and gate interconnections crossing each other on an insulating substrate. Pixels are disposed at crossing points between the signal and gate interconnections. Each pixel has at least a pixel electrode, a thin film transistor for driving the pixel electrode, and a light shield band for shielding the thin film transistor from external light. A source of the thin film transistor is connected to the signal interconnection, a drain thereof is connected to the pixel electrode, and a gate electrode thereof is connected to the gate interconnection. The light shield band is formed of a first conductive layer, and at least part of the light shield band is used as the gate interconnection. The gate electrode is formed of a second conductive layer different from the first conductive layer. The first conductive layer used for the gate interconnection is electrically connected via a contact hole to the second conductive layer forming the gate electrode within each pixel region. A pixel opening ratio of the thin film semiconductor device used as a drive substrate for an active matrix type liquid crystal display unit is thus improved.

Thin film semiconductor device and liquid crystal display unit, and fabrication methods thereof

To improve the light-shading performance of an electrically-conductive light-shading layer in a liquid crystal display device including polycrystalline SiTFT made on a quartz glass substrate for driving a pixel electrode, and including the electrically-conductive light-shading layer located in a level above the polycrystalline SiTFT and below the pixel electrode, the electrically-conductive light shading layer is stacked on a smoothed inter-layer insulating film which is smoothed by CMP, for example.

Apparatus and method for a liquid crystal display device having an electrically-conductive light-shading layer formed on a smoothed layer

A method of forming a viahole in an interlayer insulating film without formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.

Method of forming viahole

The present invention is intended to provide, in MOS transistors used as a bonding layer for silicon regions of an SOI substrate, an nMOS transistor on a silicon region of an SOI substrate which uses a polycrystalline silicon layer as a layer to be bonded with the silicon substrate and a pMOS transistor on another silicon region of the SOI substrate and electrically isolated back gate electrodes through a back gate insulation film on the silicon region side between the silicon regions and a polycrystalline silicon layer. A leak current is reduced and a malfunction of the transistors is eliminated by providing pickup electrodes for the back gate electrodes.

Method a CMOS transistor and isolated back electrodes on an SOI substrate

An apparatus and a method for production control whereby checks for cross contamination removal are made automatically to control whether to load a workpiece into a given working device depending on the work status of that workpiece. A storage unit stores status flags each indicating the work status of the workpiece. The unit also stores either a post-work status flag indicating the work status which the workpiece will be in after status-flag-designated processing by the working device, or a warning flag prohibiting the processing of the workpiece by the working device. A computing unit reads from the storage unit the status flags of the workpiece before the workpiece is loaded into the working device. The computing unit further determines whether the workpiece is suitable for being loaded into the working device in accordance with either the post-work status flag or the warning flag corresponding to the status flags of the workpiece in relation to the working device in question.

Apparatus and method for determining whether to load a workpiece into a

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Kanagawa, Japan

Makoto Hashimoto