Kabushiki Kaisha Toshiba

Makiko Wakatsuki

Yoshiaki Matsushita

Norihiko Tsuchiya

Moriya Miyashita

Atsuko Kubota

First, silicon wafers are formed by cutting silicon monocrystalline ingot into slices. Then back side and main surfaces of the wafers are subjected to lapping and etching processes. Next, the wafers are submerged into substantially pure water and ultrasonic waves are applied to the wafer surface via the water to clean at least one of the surfaces of each of the wafers and form gettering damage on the wafer surface. After this, the main surfaces of the wafers which have been subjected to the cleaning and damage-forming process and on which semiconductor elements are to be formed are polished into mirror finish.

Growing community of inventors

Yokohama, Japan

Makiko Wakatsuki