Nissan Motor Company Limited

Makiko Mitamura

Yasukazu Iwasaki

Makoto Uchiyama

Norihiko Kiritani

Takatoshi Noguchi

An etching process for a silicon semiconductor substrate to produce a semiconductor pressure sensor or a semiconductor acceleration sensor. The etching process comprises the following steps: (a) carrying out an etching of the semiconductor without application of a voltage to the semiconductor so as to accomplish a pre-etching step, the pre-etching step including dipping the semiconductor in hydrazine hydrate; and (b) carrying out an electrochemical etching of the semiconductor by applying pre-etching step so as to accomplish a final etching step, the final etching step including dipping the semiconductor in an alkali system etching solution containing at least hydrazine (N.sub.2 H.sub.4), potassium hydroxide (KOH), and water (H.sub.2 O), the alkali system etching solution containing potassium hydroxide in an amount of not less than 0.3% by weight.

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Fujisawa, Japan

Makiko Mitamura