Tokyo Ohka Kogyo Co., Ltd.

Tokyo Ohka Co., Ltd.

Makiko Irie

Takeshi Iwai

Yusuke Nakagawa

Tomoyuki Hirano

Yoshiyuki Utsumi

Kotaro Endo

Yasuhiro Yoshii

Yohei Kinoshita

Shinichi Hidesaka

Waki Ohkubo

Aya Momozawa

Hideo Hada

Tsuyoshi Nakamura

Jun Iwashita

Ryotaro Hayashi

Daichi Takaki

Satoshi Yamada

Tsuyoshi Kurosawa

Sho Abe

Takeyoshi Mimura

Shota Katayama

Yuta Yamamoto

Koji Yonemura

A chemically amplified positive-type photosensitive resin composition capable of forming a resist pattern having a nonresist portion with a favorable rectangular sectional shape, a method of manufacturing a resist pattern using the composition, a method of manufacturing a substrate with a template using the composition, and a method of manufacturing a plated article using the substrate with a template manufactured by the method. In a chemically amplified positive-type photosensitive resin composition including an acid generator, a resin whose solubility in alkali increases under the action of acid, and an organic solvent, an acrylic resin is used that includes a constituent unit derived from an acrylic acid ester including an &#x2014;SO-containing cyclic group or a lactone-containing cyclic group, and a constituent unit derived from an acrylic acid ester containing an organic group including an aromatic group and an alcoholic hydroxyl group.

Chemically amplified positive-type photosensitive resin composition

A resist composition including a base component that exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component that generates acid upon exposure, and a nitrogen-containing organic compound, the acid generator component including an acid generator represented by general formula (b0), the nitrogen-containing organic compound including a compound represented by general formula (d1) or general formula (d2) in which each of Rand Rrepresents an aryl group or an alkyl group, Rf represents a fluorinated alkyl group, Xrepresents a counter anion, each of Rand Rrepresents an aliphatic hydrocarbon group, Rrepresents a hydrocarbon group having 5 or more carbon atoms, and each of Rand Rindependently represents a hydrogen atom, an aliphatic hydrocarbon group, or &#x2014;C(&#x2550;O)&#x2014;O&#x2014;R. 

Resist composition and method of forming resist pattern

A chemically amplified positive-type photosensitive resin composition for thick-film application capable of forming a resist pattern having a nonresist section with a good rectangular cross-sectional shape under a low exposure level even when a resist pattern having a film thickness of 10 &#x3bc;m or more is formed. A chemically amplified positive-type photosensitive resin composition for thick-film application comprising an acid generator and an organic solvent, in which an acrylic resin is added that contains a constituent unit derived from an acrylic acid ester comprising an &#x2014;SO-containing cyclic group or a lactone-containing cyclic group as a resin whose solubility in alkali increases under the action of acid.

Chemically amplified positive-type photosensitive resin composition for thick-film application

A chemically amplified photosensitive resin composition including a compound represented by formula (1) and/or formula (4), a resin having an acid-dissociative dissolution-controlling group whose solubility in alkali increases under the action of an acid or an alkali-soluble resin, a photoacid generator, and an organic solvent, in which the solid concentration is 40% by mass to 65% by mass. R, R, and Rindependently represent a hydrogen atom or an alkyl group, Rrepresents a group represented by formula (2) or (3), and Rand Rrepresent a monovalent hydrocarbon group which may have a substituent. 

Chemically amplified photosensitive resin composition and method for producing resist pattern using the same

A chemically amplified positive-type photosensitive resin composition including a compound represented by the following formula (1), having a melting point of 40&#xb0; C. or lower at 1 atm, a resin whose solubility in alkali increases under the action of an acid, and a photoacid generator. In the formula, Rrepresents a hydrogen atom or an organic group; and R, R, and Rindependently represent a monovalent hydrocarbon group which may have a substituent, and at least two of R, R, and Rmay be bonded to each other to form a cyclic structure. 

Chemically amplified positive-type photosensitive resin composition and method for producing resist pattern using the same

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms). 

Resist composition, method of forming resist pattern, and polymeric compound

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (Rrepresents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; W represents &#x2014;COO&#x2014;, a &#x2014;CONH&#x2014; group or a divalent aromatic hydrocarbon group; Yand Yrepresent a divalent linking group or a single bond; R'represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R&#x2032;represents a monovalent aliphatic hydrocarbon group; and Rrepresents an &#x2014;SO&#x2014; containing cyclic group). 

A resist composition for immersion exposure and a method of forming a resist pattern which can satisfy both of excellent resistance to an immersion medium and lithography properties. The resist composition for immersion exposure includes a resin component (A) which exhibits changed alkali solubility under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) including a resin (A1) which contains a fluorine atom and a resin (A2) which has a structural unit (a') derived from acrylic acid and contains no fluorine atom, and the amount of the resin (A1) contained in the resin component (A) being within the range from 0.1 to 50% by weight.

Resist composition for immersion exposure and method of forming resist pattern

A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a') derived from an acrylic acid and no fluorine atom.

Resist composition for immersion lithography and method for forming resist pattern

Provided are a novel positive resist composition that includes a low molecular weight material as a base material component, and a method of forming a resist pattern using the positive resist composition. A positive resist composition including: a base material component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) comprises a compound (A1) in which either a portion of, or all of, the hydrogen atoms of hydroxyl groups (&#x2014;OH) within a phenolic compound (I) described below have been substituted with a group containing an acid dissociable, dissolution inhibiting group:

Positive resist composition and method of forming resist pattern

A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; Q represents a divalent linking group containing a nitrogen atom or an oxygen atom; Rrepresents a lower alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; p represents an integer of 1 to 3; and q represents an integer of 0 to 2) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group exclusive of groups that exhibit aromaticity. 

A resist composition for immersion exposure and a method of forming a resist pattern are provided which can satisfy both of excellent resistance to an immersion medium and lithography properties. The resist composition for immersion exposure includes a resin component (A) which exhibits changed alkali solubility under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) including a resin (A1) which contains a fluorine atom and a resin (A2) which has a structural unit (a') derived from acrylic acid and contains no fluorine atom, and the amount of the resin (A1) contained in the resin component (A) being within the range from 0.1 to 50% by weight.

A positive resist composition, including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the component (A) includes a structural unit (a1) derived from a hydroxystyrene, and a structural unit (a2) containing an acid dissociable, dissolution inhibiting group; and the component (B) includes an acid generator (B1) composed of a compound represented by the general formula (b1) shown below:[Chemical Formula 1]X-Q-Y&#x2014;SOA&#x2003;&#x2003;(b1)(in the formula, Qrepresents a bivalent linking group containing an oxygen atom; Yrepresents an alkylene group of 1 to 4 carbon atoms which may contain a substituent or a fluorinated alkylene group of 1 to 4 carbon atoms which may contain a substituent; X represents a hydrocarbon group of 3 to 30 carbon atoms which may contain a substituent; and Arepresents an organic cation).

A positive resist composition with a broad DOF and a method for resist pattern formation are provided. This composition is a positive resist composition which includes a resin component (A) that exhibits increased alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure, wherein the component (A) is a copolymer that contains n [wherein, n is an integer fromto] structural units with mutually different structures, and the proportion of each structural unit within the copolymer is greater than 0 mol % but no higher than 100/(n&#x2212;1) mol %.

Positive resist composition and method for resist pattern formation

A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein Rrepresents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; Rand Reach independently represents a hydrogen atom, an alkyl group or an alkoxy group, or Rand Rmay be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, &#x2014;O&#x2014; or &#x2014;S&#x2014;; Rand Reach independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.

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Kawasaki, Japan

Makiko Irie