Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Maitland Gary Graham

Xiaobo Shi

Matthias Stender

James Allen Schlueter

Dnyanesh Chandrakant Tamboli

James Matthew Henry

Savka I Stoeva

Shi Xiaobo

Chandrakant Tamboli Dnyanesh

Savaka I Stoeva

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Additives for barrier chemical mechanical planarization

Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH&#x3e;7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Stop-on silicon containing layer additive

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing ethylene oxide repeating units having the general molecular structure of where n refers to the total numbers of the repeating unit giving the molecular weights of polyethylene oxide ranging from 100,000 to 8,000,000. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Barrier chemical mechanical planarization composition and method thereof

Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for 'SiC', SiN' and 'SiCN&#x201d; films; and tunable removal selectivity for &#x201c;SiC&#x201d; in reference to SiO, &#x201c;SiN&#x201d; in reference to SiO, &#x201c;SiC&#x201d; in reference to &#x201c;SiN&#x201d;, or &#x201c;SiCN&#x201d; in reference to SiO; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.

Chemical mechanical polishing composition having chemical additives and methods for using same

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Tempe, AZ, United States of America

Maitland Gary Graham