Applied Materials, Inc.

Madhu Santosh Kumar Mutyala

Deenesh Padhi

Hang Yu

Sanjay G Kamath

Mayur G Kulkarni

Akshay Dhanakshirur

Saketh Pemmasani

Daemian Raj Benjamin Raj

Xiaopu Li

Arkajit Roy Barman

Exemplary deposition methods may include introducing a precursor into a processing region of a semiconductor processing chamber via a faceplate of the semiconductor processing chamber. The methods may include flowing an oxygen-containing precursor into the processing region from beneath a pedestal of the semiconductor processing chamber. The pedestal may support a substrate. The substrate may define a trench in a surface of the substrate. The methods may include forming a first plasma of the precursor in the processing region of the semiconductor processing chamber. The methods may include depositing a first oxide film within the trench. The methods may include forming a second plasma in the processing region. The methods may include etching the first oxide film, while flowing the oxygen-containing precursor. The methods may include re-forming the first plasma in the processing region. The methods may also include depositing a second oxide film over the etched oxide film.

Silicon oxide gap fill using capacitively coupled plasmas

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.

Shaped showerhead for edge plasma modulation

Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

Low impedance current path for edge non-uniformity tuning

Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

Mesa height modulation for thickness correction

Exemplary deposition methods may include forming a plasma of a silicon-containing precursor and at least one additional precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include depositing material on the semiconductor substrate to a target thickness. The methods may include halting delivery of the silicon-containing precursor while maintaining the plasma with the one or more precursors. The methods may include purging the processing region of the semiconductor processing chamber.

Methods for pressure ramped plasma purge

Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

Multi channel splitter spool

Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber at a first flow rate. The methods may include ramping the first flow rate of the silicon-containing precursor over a period of time to a second flow rate greater than the first flow rate. The methods may include depositing a silicon-containing material on the semiconductor substrate.

Initiation modulation for plasma deposition

Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.

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Santa Clara, CA, United States of America

Madhu Santosh Kumar Mutyala