Intel Corporation

Madhav Datta

Subhash M Joshi

Dave Emory

Doowon Suh

Susanne Menezes

Zhiyong Ma

Valery M Dubin

Peter K Moon

Christopher D Thomas

Paul McGregor

Simon Yang

Thomas N Marieb

Tzeun-luh Huang

Christine A King

Michael Mckeag

Christopher Thomas

Paul J Mcgregor

The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same

A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.

Method of electroless introduction of interconnect structures

A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.

Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps

The present invention describes a method including providing a component, the component having a bond pad; forming a passivation layer over the component; forming a via in the passivation layer to uncover the bond pad; and forming an under bump metallurgy (UBM) over the passivation layer, in the via, and over the bond pad, in which the UBM includes an alloy of Aluminum and Magnesium. The present invention also describes an under bump metallurgy (UBM) that includes a lower layer, the lower layer including an alloy of Aluminum and Magnesium; and an upper layer located over the lower layer.

Under bump metallurgy for Lead-Tin bump over copper pad

The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.

Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same

Under bump metallurgy for lead-tin bump over copper pad

An apparatus including a substrate comprising a device having contact point; a dielectric layer overlying the device with an opening to the contact point; and an interconnect structure disposed in the opening including an interconnect material and a different conductive shunt material.

Interconnect structures and a method of electroless introduction of interconnect structures

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Portland, OR, United States of America

Madhav Datta