Infineon Technologies Ag

Infineon Technologies Austria Ag

Maciej Wojnowski

Walter Hartner

Rudolf Lachner

Ernst Seler

Josef Boeck

Thorsten Meyer

Linus Maurer

Frank Daeche

Zeeshan Umar

Petteri Palm

Josef Hoeglauer

Xaver Schloegel

Andrew Neil Sawle

Francesca Arcioni

Saverio Trotta

Christian Geissler

Claus Waechter

Tuncay Erdoel

Mehran Pour Mousavi

Gottfried Beer

Ashutosh Baheti

Thomas Kilger

Bernhard Rieder

Klaus Pressel

Ottmar Geitner

Markus Josef Lang

Martin Richard Niessner

Dirk Hammerschmidt

Horst Theuss

Klaus Elian

Michael Bauer

Georg Meyer-Berg

Rainer Markus Schaller

Dominic Maier

Michael Kandler

Maximilian Werner

Ulrich Wachter

Hubert Werthmann

Jagjit Singh Bal

Robert Fehler

Johannes Lodermeyer

Josef-Paul Schaffer

Ulrich Moeller

Alexander Glas

Ngoc-Hoa Huynh

Franz-Xaver Muehlbauer

Thomas Engl

Gabriele Bettineschi

Veronika Huber

Gerhard Haubner

Andreas Stueckjuergen

Marwa Abdel-Aziz

Mustafa Dogan

Muhammad Tayyab Qureshi

Chiara Mariotti

Birgit Hebler

Franz Xaver Engelsberger

A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. The recess is arranged over the antenna.

Semiconductor device having an antenna arranged over an active main surface of a semiconductor die

A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

Radio-frequency devices and methods for producing radio-frequency devices

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

Semiconductor devices comprising a radar semiconductor chip and associated production methods

A power semiconductor system includes: a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board; and an inductor module attached to the power stage module and having an inductor electrically connected to an output node of the power stage module. The inductor includes windings patterned into a second printed circuit board of the inductor module.

Power semiconductor system having an inductor module attached to a power stage module

A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

Transmission of wireless signal having information on a local oscillator signal

A tire pressure monitoring system (TPMS) includes a communication interface device configured to communicate with a target TPMS sensor module. The communication interface device include a radio frequency (RF) transceiver configured to generate at least one wake-up signal; an antenna array configured to transmit each wake-up signal as a directional RF beam; a processing circuit configured to monitor for a response signal in response to the antenna array transmitting the at least one wake-up signal; and a power amplifier configured to set a power of each wake-up signal according to an adjustable power setting such that the power of each subsequent wake-up signal is increased in discrete steps until the response signal is received by the RF transceiver.

Selective activation of tire pressure monitoring system (TPMS) sensor modules for radio-frequency (RF) communication using directional RF beams

A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.

Chip package with substrate integrated waveguide and waveguide interface

A method of manufacturing a power semiconductor system includes providing a power module having one or more power transistor dies and attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module. The inductor module includes a substrate with a magnetic material and windings at one or more sides of the substrate. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.

Method of manufacturing a power semiconductor system

A semiconductor device including an Integrated Circuit (IC) package and a plastic waveguide. The IC package includes a semiconductor chip; and an embedded antenna formed within a Redistribution Layer (RDL) coupled to the semiconductor chip, wherein the RDL is configured to transport a Radio Frequency (RF) signal between the semiconductor chip and the embedded antenna. The plastic waveguide is attached to the IC package and configured to transport the RF signal between the embedded antenna and outside of the IC package.

Semiconductor package with plastic waveguide

A packaged radar includes laminate layers, a ground plane associated with at least one of the laminate layers, a transmit antenna and a receive antenna associated with at least one of the laminate layers, and an electromagnetic band gap structure between the transmit antenna and the receive antenna for isolating the transmit antenna and the receive antenna, the electromagnetic band gap structure including elementary cells forming adjacent columns each coupled to the ground plane, and each elementary cell including a conductive planar element and a columnar element coupled to the conductive planar element.

Integration of EBG structures (single layer/multi-layer) for isolation enhancement in multilayer embedded packaging technology at mmWave

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

Semiconductor devices having a non-galvanic connection

A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

Semiconductor device including an antenna

A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.

Semiconductor devices having cutouts in an encapsulation material and associated production methods

A method of forming a chip arrangement is provided. The method includes: arranging a plurality of stacks on a carrier, each stack including a thinned semiconductor chip, a further layer, and a polymer layer between the further layer and the chip, each stack being arranged with the chip facing the carrier; joining the plurality of stacks with each other with an encapsulation material to form the chip arrangement; exposing the further layer; and forming a redistribution layer contacting the chips of the chip arrangement.

Method of forming a chip arrangement, chip arrangement, method of forming a chip package, and chip package

Growing community of inventors

Munich, Germany

Maciej Wojnowski