Macronix International Co., Ltd.

Ma Chia-Chih

Hsin-Cheng Liu

Ching-Ping Wu

Han-Maou Chang

Nan-Tzu Lian

H Wally Lee

A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

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Hsinchu, Taiwan

Ma Chia-Chih