Sharp Kabushiki Kaisha Corporation

Sharp Microelectronics Technology, Inc.

Sharp Laboratories of America, Inc

Lynn R Allen

Tue H Nguyen

Lawrence J Charneski

John Martin Grant

A method is provided for preventing the formation of oxides in the process of creating a connection aperture through an insulating layer overlying a copper conductor having a connection surface region. The method deposits at least two insulation layers over the copper connection region including a nitride dielectric material adjacent the connection region, and a second insulating material adjacent the nitride layer. An area of the second insulator is selectively removed to partially form a connection aperture extending to the nitride layer. Next, an area of the nitride layer, and any layer overlying the nitride layer, is selectively removed to form an aperture in registration with the aperture formed in the second layer. The completed connection aperture extends through the entire insulating layer to the connection region. The nitride layer protects the copper from processes that cause oxidation as the layers overlying the nitride layer are removed. The present invention also provides an integrated circuit with at least two insulation layers overlying a copper connection region, with a nitride layer adjacent the connection region.

Method for preventing oxidation in the formation of a via in an

A method has been provided for improving the adhesion of Cu to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The diffusion barrier is exposed to either a reactive oxygen species, or a plasma containing oxygen. A thin layer of the diffusion barrier is oxidized, typically less than 50 .ANG., in response to exposure to the oxygen environment. CVD copper is then deposited over the oxidized diffusion barrier surface. The oxide layer improves bonding between the copper and diffusion barrier surfaces. The oxide layer permits the control of tolerances in the diffusion barrier preparation processes, and copper precursor, to be relaxed. An integrated circuit comprising an oxide layer between the diffusion barrier and the copper layer is also provided.

Oxidized diffusion barrier surface for the adherence of copper and

Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of the same are disclosed. In one embodiment a plasma reactor is used to anisotropically convert unmasked portions of a copper layer at low temperature into copper chloride. The copper chloride is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper chloride; (2) vaporizing the copper chloride away; and (3) converting the copper chloride into a volatile, secondary compound. In another embodiment an ion implanter is used to anisotropically convert desired portions of a copper layer into copper oxide. The copper oxide is removed by one or more of the following steps: (1) solvation by a solvent specific to the copper oxide; (2) vaporizing the copper oxide away; and (3) converting the copper oxide into a volatile, secondary compound.

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Camas, WA, United States of America

Lynn R Allen