Jetek, Inc.

Hughes Aircraft Company

Lynn David Bollinger

Iskander Tokmouline

Richard R Poole

George J Gardopee

Michael P Power

A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.

Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes

A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.

Atmospheric process and system for controlled and rapid removal of polymers from high depth to width aspect ratio holes

A technique is described for a very rapid thermal treatment of a substrate used to make semiconductor devices. The substrate is subjected to a very hot gas stream such as can be produced from an arc-type plasma generator. The substrate is then moved through the hot gas stream at a velocity selected to sufficiently heat the surface of the substrate to a high temperature at which doping and diffusion processes can be done in an efficient manner, while a thermal gradient is preserved throughout the thickness of the substrate. In this manner as the substrate moves through the hot gas stream a rapid heating of the surface is achieved and as the heated portion moves out of the gas stream, the bulk of the substrate can assist in the cooling of the heated portion. Sharply defined doping regions can be formed in the substrate. The method yields temperature heating and cooling rates of the order of 10 &deg; C./sec, peak temperatures up to the melting point of a substrate such as silicon without permanent distortion or introducing defects into the substrate, enables very fast low temperature annealing and activation with peak temperatures of 3000 to 100&deg; C., provides process uniformity and throughput needs for silicon device manufacturing.

Method for rapid thermal processing of substrates

Multiple plasma jet path sensing positions and multiple localized steering magnetic fields for each plasma jet leg in an atmospheric plasma jet control system are described for a precise control over positions of plasma jet legs as well as their directions in a vertex zone, where a hot gas stream is generated for treatment of a semiconductor device. With a plasma jet generator system in accordance with the invention precise control over the plasma jet legs enables one to virtually eliminate plasma jet path instability at the vertex region.

System for precision control of the position of an atmospheric plasma

In the method and apparatus of this invention a wafer for manufacturing semiconductor devices is held by a vortex-type substrate holder against a moveable frame during processing. Motion of the wafer is controlled with movement of the frame. The frame is shaped to provide a sealed chamber through which gas that is used to create the vortices is also re-captured. With such sealed chamber a higher heat conducting but more expensive gas can be recycled and used for the vortex holder and cooling of the wafer. In another technique of this invention, damage of the wafer edges from impacts with position limiters is avoided by inserting a small physical off-set of the center of mass of the wafer relative to that of the frame used to rotate the wafer. This prevents sliding of the wafer within the holder. In another feature of the invention end effects during treatment of the wafer are avoided by providing an extension around the wafer. The extension assures that the treating gas stream provides the same treatment to the edge of the wafer as in its center.

Wafer holder for rotating and translating wafers

A stage 14 supporting a material removal tool 12 is instructed by a controller 16 through interface 18 to accelerate and decelerate the material removal tool 12 within at least one predetermined spatial interval while satisfying the dwell-time required to remove a predetermined amount of material to achieve a desired thickness of the spatial interval.

Method and apparatus for moving a material removal tool with low tool

A support and positioning apparatus (10) for supporting and positioning a wafer (12), substrate or the like in a plasma assisted chemical etching process. Surround components (14, 16, 18, 20) positioned around the substrate (12) are comprised of substantially pure magnesium or are aluminum coated with a magnesium fluoride coating such that as a plasma tool associated with the plasma etching process traverses the edge of the substrate (12), the plasma etching environment generated from a fluorine containing feed gas emitted from the plasma tool does not significantly erode the surround components (14, 16, 18, 20) or cause contamination of the substrate (12).

Growing community of inventors

Ridgefield, CT, United States of America

Lynn David Bollinger