Schott Ag

Schott Glas

Aixuv Gmbh

Jenoptik Mikrotechnik Gmbh

Lutz Aschke

Jochen Alkemper

Hrabanus Hack

Rainer Lebert

Markus Schweizer

Frank Sobel

Markus Renno

Hans Becker

Larissa Juschkin

Ulf Heim

Mario Schiffler

Axel Schindler

Frank Frost

Thomas Haensel

Renate Fechner

This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and the rear side of the substrate comprises an electrically conductive coating. The electrically conductive coating is particularly abrasion resistant and strongly adhesive according to DIN 58196-5 (German Industry Standard), DIN 58196-4 and DIN 58196-6 and characterised by a minimum electrical conductivity. The electrically conductive coating is applied by means of ion-beam-assisted sputtering. Since the electrically conductive coating on the rear side is so abrasion resistant and strongly adhesive, the mask blank may be gripped, held and handled by means of an electrostatic holding device (chuck) without any troublesome abrasion occurring.

Mask blank for use in EUV lithography and method for its production

The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

Substrate for the micro-lithography and process of manufacturing thereof

The present invention relates to a substrate in particular of EUV microlithography, to the production of a substrate of this type and to the use of this substrate as a substrate for mirrors and/or masks or mask blanks in particular in EUV microlithography.

Substrates for in particular microlithography

In a reflectometer arrangement and a method for determining the reflectance of selected measurement locations on measurement objects reflecting in a spectrally dependent manner, the object of the invention is to reduce the time for measuring a measurement object with a robust and simple measurement structure to such an extent that compact radiation sources with low output compared to a synchrotron can be used at the site of production or of use of the measurement object to characterize the object characteristics in a manner suited to series production. A measurement beam bundle proceeding from a polychromatically emitting radiation source is directed onto the measurement location of the measurement object sequentially in modified manner by impressing spectral reference reflection characteristics and the radiation reflected from every measurement location is detected integrally. The arrangement and the method can be used with surfaces which reflect in a spectrally dependent manner and which are designed particularly for radiation in the extreme ultraviolet range.

Reflectometer arrangement and method for determining the reflectance of selected measurement locations of measurement objects reflecting in a spectrally dependent manner

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Mainz, Germany

Lutz Aschke