Sgs-thomson Microelectronics Limited

Stmicroelectronics Gmbh

Lun-Tseng Lu

Che-Chia Wei

Yih-Shung Lin

Frank R Bryant

Tsiu Chiu Chan

Fu-Tai Liou

John L Walters

Kuei-Wu Huang

A method is provided for forming contact via in an integrated circuit. Initially, a first buffer layer is formed over an insulating layer in an integrated circuit. The first buffer layer has a different etch rate from the insulating layer. A second buffer layer is then formed over the first buffer layer, with the second buffer layer having an etch rate which is faster than the first buffer layer. An isotropic etch is performed to create an opening through the second buffer layer and a portion of the first buffer layer. Because the second buffer layer etches faster than the first buffer layer, the slant of the sideswalls of the opening can be controlled. An anisotropic etch is then performed to complete formation of the contact via.

Semiconductor contact via structure

A structure and method for fabricating intergrated circuit which provides for the detection of residual conductive material. A first conductive layer is deposited over the intergrated circuit and patterned to define a first interconnect layer. An insulating layer in then formed over the integrated circuit. A second conductive layer is then deposited and patterned to define a second interconnect layer. Residual conductive material can be formed during pattering of the second interconnect layer when portions of the second conductive layer remain adjacent to the vertical sidewalls of the first interconnect layer. To make the residual conductive material easier to detect, the conductivity of the residual conductive material is increased by either implanting impurities into the integrated circuit or siliciding the residual conductive material with a refractory metal.

Method for forming interconnect in integrated circuits

A structure and method for fabricating integrated circuits which provides for the detection of residual conductive material. A first conductive layer is deposited over the integrated circuit and patterned to define a first interconnect layer. An insulating layer is then formed over the integrated circuit. A second conductive layer is then deposited and patterned to define a second interconnect layer. Residual conductive material can be formed during patterning of the second interconnect layer when portions of the second conductive layer remain adjacent to the vertical sidewalls of the first interconnect layer. To make the residual conductive material easier to detect, the conductivity of the residual conductive material is increased by either implanting impurities into the integrated circuit or siliciding the residual conductive material with a refractory metal.

Structure and method for fabricating integrated circuits

A method for planarization of an integrated circuit. After a first conducting layer is deposited and patterned, a first insulating layer is deposited over the device. A planarizing layer is then deposited over the integrated circuit and etched back. Portions of the planarizing layer may remain in the lower topographical regions of the first insulating layer to planarize the surface of the device. A second insulating layer is then deposited over the integrated circuit, followed by a third insulating layer. A contact via is formed through the layers to expose a portion of the first conducting layer. A second conducting layer can now be deposited and patterned on the device to make electrical contact with the first conducting layer.

Method for planarization of an integrated circuit

A method is provided for forming contact vias in an integrated circuit. Initially, a first buffer layer is formed over an insulating layer in an integrated circuit. The first buffer layer has a different etch rate from the insulating layer. A second buffer layer is then formed over the first buffer layer, with the second buffer layer having an etch rate which is faster than the first buffer layer. An isotropic etch is performed to create an opening through the second buffer layer and a portion of the first buffer layer. Because the second buffer layer etches faster than the first buffer layer, the slant of the sideswalls of the opening can be controlled. An anisotropic etch is then performed to complete formation of the contact via.

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Grand Prairie, TX, United States of America

Lun-Tseng Lu