Lam Research Corporation

Varian Associates, Inc.

Lumin Li

Rajinder Dhindsa

Eric H Lenz

Eric A Hudson

Felix Leib Kozakevich

Tuqiang Q Ni

Reza Sadjadi

Mukund Srinivasan

David J Hemker

Dave Trussell

Andrew D Bailey, Iii

Alexei Marakhtanov

Douglas L Keil

Gerardo Delgadino

Sang Ki Nam

Zhisong Huang

Camelia Rusu

Wenli Z Collison

Ryan Bise

George A Mueller

Mike Kellogg

Jim Rogers

S M Reza Sadjadi

Andras Kuthi

Siamak Salimian

Anthony De La Llera

Darrell Ehrlich

Ji Soo Kim

Raj Dhindsa

Andy W DeSepte

Carol M Heller

Jeffrey S Marks

Jisoo Kim

Helen H Zhu

Bing Ji

Aaron Eppler

Thomas D Nguyen

Erik A Edelberg

Bi-Ming Yen

Takumi Yanagawa

Andrew R Romano

Rajindar Dhindsa

Jim Tietz

Anthony Dela Llera

Reza S M Sadjadi

A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

Multi zone gas injection upper electrode system

A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

Dual zone temperature control of upper electrodes

A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

Apparatus and method for controlling plasma potential

A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.

Apparatus and method for controlling etch uniformity

A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

Apparatus and method for controlling plasma density profile

A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same

A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor

An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same

A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.

Double mask self-aligned double patterning technology (SADPT) process

A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.

Method for plasma etching performance enhancement

A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

Magnetic enhancement for mechanical confinement of plasma

A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

High aspect ratio etch using modulation of RF powers of various frequencies

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Santa Clara, CA, United States of America

Lumin Li