Memc Electronic Materials, Inc.

Luciano Mule&prime;Stagno

Robert J Falster

Harold W Korb

Joseph C Holzer

Lu Fei

The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated silicon self-interstitial defects on the substrate surface upon which the epitaxial layer is deposited.

Epitaxial wafer substantially free of grown-in defects

A process for revealing agglomerated intrinsic point defects in a single crystal silicon sample. The process includes heat-treating the single crystal silicon sample, cooling the heat-treated sample and then coating a surface of the cooled sample with a composition containing a metal which is capable of decorating agglomerated intrinsic point defects. The coated sample is then heat-treated in an inert atmosphere at a temperature and for a time sufficient to diffuse the metal into the sample. A non-defect delineating etch is performed, followed by a defect delineating etch to reveal the decorated agglomerated intrinsic point defects.

Growing community of inventors

St. Louis, MO, United States of America

Luciano Mule′Stagno

Growing community of inventors

St. Louis, MO, United States of America

Luciano Mule&prime;Stagno

Luciano Mule′Stagno