Aselta Nanographics

Other

Luc Martin

Thomas Quaglio

Serdar Manakli

Charles Tiphine

Clyde Browning

Matthieu Millequant

A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

Method of reducing shot count in direct writing by a particle or photon beam

The invention discloses a computer implemented method of fracturing a surface into elementary features wherein the desired pattern has a rectilinear or curvilinear form. Depending upon the desired pattern, a first fracturing will be performed of a non-overlapping or an overlapping type. If the desired pattern is resolution critical, it will be advantageous to perform a second fracturing step using eRIFs. These eRIFs will be positioned either on the edges or on the medial axis or skeleton of the desired pattern. The invention further discloses method steps to define the position and shape of the elementary features used for the first and second fracturing steps.

Free form fracturing method for electronic or optical lithography

A computer implemented method of fracturing free form target design into elementary shots for defined roughness of the contour comprises determining a first set of shots which pave the target design and determining a second set of shots to fill the gaps. The dose levels of overlapping shots in the first or second sets of shots are determined so the compounded dose is adequate to the resist threshold, considering the proximity effect of the actual imprint of shots on the insulated target. A dose geometry modulation is applied and rounded shot prints are produced by shots not circular that may overlap. The degree of overlap is determined as a function of desired optimization of fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots are determined by a plurality of fit criteria between printed contour and contour of the desired pattern.

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Saint Egreve, France

Luc Martin