Jiangsu Leuven Instruments Co. Ltd

Suzhou China Star Optoelectronics Technology Co., Ltd.

Nantong Memtech Technologies Co., Ltd.

Lu Chen

Dongdong Hu

Kaidong Xu

Dongchen Che

Ziming Liu

Zhongyuan Jiang

Juebin Wang

Hushan Cui

Dajian Han

Zhiwen Zou

Na Li

Hongmei Zhang

Junjie Li

Xiaobo Liu

Huisheng Han

Yang Ding

Yonggang Hou

Guoqiang Wu

Yaoyao Zhang

Xiaosheng Wu

Yong Qiu

Linyu Ye

Hongyue Sun

Huiqun Ren

Bangyin Peng

Cheng Huang

Xiaoli Shi

Xiaolei Li

A rubber and metal composite electric contact and a preparation process therefor. The rubber and metal composite electric contact is a circular layered complex which is formed by tightly combining a metal sheet layer having a plurality of through holes and a rubber layer by means of thermal vulcanization molding and which has a thickness of 0.1 to 5 mm and a diameter of 1 to 15 mm. There is no isolation layer between the rubber layer and the metal layer of the electric contact, so no rubber overflows the outer surface of the metal layer. In the rubber and metal composite electric contact, the rubber and metal are combined firmly and the overall strength of the electric contact is adjustable; the electric contact also has good dust resistance; and the electric contact thus has stable and reliable electrical conductivity.

Rubber and metal composite electric contact and preparation method therefor

A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber () and an ion beam etching chamber () are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber () and the reactive ion plasma etching chamber () solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.

Multilayer magnetic tunnel junction etching method and MRAM device

Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.

Method for etching magnetic tunnel junction

An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.

Etching uniformity regulating device and method

A display device is provided. The display device includes a back frame, a display module, and a polarizer. The back frame has a cavity, and the display module is disposed in the cavity. The polarizer is arranged on the display module and a body of the back frame surrounding the display module. The polarizer is extended to the back frame in the non-display area, thereby removing a front frame in the prior art, reducing a thickness of the display device, and increasing an area of the display area.

Display device

There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.

Etching method for magnetic tunnel junction

A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (), a vacuum transition chamber (), a reactive ion plasma etching chamber (), an ion beam etching chamber (), a film coating chamber (), and a vacuum transport chamber (). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (); then, ion beam etching is performed to etch into a fixed layer () and stopped near a bottom electrode metal layer (), leaving only a small amount of the fixed layer (); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Semiconductor device manufacturing method

Growing community of inventors

Jiangsu, China

Lu Chen