Solid State Measurements, Inc.

Louison Tan

Robert J Hillard

In a method and apparatus for determining one or more electrical properties of a semiconductor wafer or sample, the response of a semiconductor wafer or sample to an applied CV-type electrical stimulus is measured. Utilizing a recursive technique, progressively more accurate values of equivalent oxide thickness CET, maximum capacitance Cox, flatband voltage Vfb and other properties of the semiconductor wafer or sample are determined from the measured response. An equivalent oxide thickness EOT of the semiconductor wafer or sample can be determined as a function of the most accurate value of CET determined based upon convergence of at least one of (1) the last two values of Cox or (2) the last two values of Vfb within a predetermined convergence criteria. One or more of the EOT value and/or values of one or more of CET, Cox or Vfb can then be output in a human detectable form.

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Pittsburgh, PA, United States of America

Louison Tan