Applied Materials, Inc.

Louis Yang

Li-Qun Xia

Ping Xu

Chi-I Lang

Tzu-Fang Huang

Wen H Zhu

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method of depositing low k barrier layers

Method of depositing low K barrier layers

A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NRRR, wherein R, R, and Rare selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

Method of depositing a low k dielectric barrier film for copper damascene application

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Growing community of inventors

San Francisco, CA, United States of America

Louis Yang