Taiwan Semiconductor Manufacturing Comp. Ltd.

Chang Chun Plastics Co., Ltd.

Long Hua Lee

Jing-Cheng Lin

Ying-Ching Shih

Szu-Wei Lu

Li-Chung Kuo

Kuan-Yu Huang

Chih-Wei Wu

Yu-Wei Chen

Jui-Pin Hung

Chih-Hao Chen

Chung Yu Wang

Kung-Chen Yeh

Yi-Lin Tsai

Chun-Hsing Su

Chen-Hua Douglas Yu

Shin-Puu Jeng

Sung-Hui Huang

Ying-Da Wang

Pai Yuan Li

Chin-Fu Kao

Szu Wei Lu

Chin-Chuan Chang

Hsien-Wen Liu

Yi-Chao Mao

Shih-Yi Syu

Ying-Tz Hung

Wen Chang Chen

A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material.

Method of forming integrated fan-out packages with built-in heat sink

A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

Underfill structure for semiconductor packages and methods of forming the same

Integrated fan-out packages and methods of forming the same

In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.

Method of manufacture of a semiconductor device

An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.

Die-to-die gap control for semiconductor structure and method

A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Package for three dimensional integrated circuit

A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.

Methods for de-bonding carriers

The present invention relates to a process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material, which is characterized by using an acid-free sol-gel process to prepare a precursor solution of acrylate/titanium alkoxide composite film, then coating the precursor solution on a silicon wafer then drying, and producing the optical waveguide component having channels by using a lithography process. The present invention also relates to an optical waveguide component of acrylate/titanium alkoxide composite material, the material has excellent transparency and its refractive index varies with the amount of titanium alkoxide contained therein. When an optical waveguide component is prepared from the composite the reduction of near-infrared ray is less than 0.7 dB/cm and therefore the waveguide component is advantageous for use as an optical communication element.

Process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material and the prepared optical waveguide component

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Taipei, Taiwan

Long Hua Lee