Applied Materials, Inc.

Lolita L Sharp

Glen T Mori

Joe F Sommers

Mark D Menzie

Shyh-Nung Steve Lin

Daniel Owen Clawson

Anantha K Subramani

Donald M Mintz

David Datong Huo

A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Chamber having components with textured surfaces and method of manufacture

A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Chamber components having textured surfaces and method of manufacture

A semiconductor fabrication equipment component which is exposed to a film layer fabrication environment exhibits a surface which is embossed with a pattern to provide an enhanced surface area for particle retention. The component is fabricatable using numerous embossing techniques, including knurling. The embossed surface provides the enhanced surface area without imposing a particle load on the treated part.

Embossed semiconductor fabrication parts

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Los Gatos, CA, United States of America

Lolita L Sharp