Enkris Semiconductor, Inc.

Liyang Zhang

Kai Cheng

Dandan Zhu

The present disclosure provides a full-color LED structure, a full-color LED structure unit, and a method for manufacturing the same. Different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region of the light-emitting layer are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer. The above process is simple and can form full-color LED structure units during a single epitaxial growth process of the light-emitting layer, such that the size of the full-color LED is reduced, the cost is reduced, the service life is extended, and the reliability is improved.

Full-color LED structure, and full-color LED structure unit and method for manufacturing same

This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.

Semiconductor structures and methods of manufacturing the same

Disclosed is a method for preparing a substrate relate to the field of semiconductors. The method comprises the following steps: S, providing a reaction container in which a base substrate is mounted; S, conducting a metal source into the reaction container, and forming a thin film layer on a surface of the base substrate, wherein a part of a surface of the base substrate is covered by the thin film layer, so that the base substrate is provided with an exposed surface that is not covered by the thin film layer; and S, conducting a corrosive gas into the reaction container to form one or more recessed holes in at least a part of the exposed surface.

Method for preparing a substrate

The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.

Semiconductor structures

Semiconductor structures and manufacturing methods thereof. A semiconductor structure includes: a first epitaxial layer; a bonding layer, on first epitaxial layer and provided with a first through-hole exposing first epitaxial layer; a silicon substrate, on a side of bonding layer away from first epitaxial layer, first epitaxial layer and the silicon substrate being bonded through the bonding layer; a through-silicon-via, in silicon substrate, through-silicon-via communicating with first through-hole; a second epitaxial layer, on first epitaxial layer exposed by first through-hole; a first electrode, on a side of first epitaxial layer away from bonding layer, and electrically coupled with first epitaxial layer; a second electrode, on a side of second epitaxial layer away from first epitaxial layer, and electrically coupled with second epitaxial layer.

Semiconductor structures and manufacturing methods thereof

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.

Disclosed are a light-emitting device, a template of the light-emitting device and preparation methods thereof. The template of the light-emitting device comprises a substrate; a GaN-based semiconductor layer and a mask layer provided on the substrate, where the mask layer comprises a plurality of mask openings provided at intervals, and the plurality of mask openings are filled with the GaN-based semiconductor layer; and a sacrificial layer provided on a surface of the GaN-based semiconductor layer away from the substrate and located in the plurality of mask openings provided at intervals.

Light-emitting device, template of light-emitting device and preparation methods thereof

Provided is a method of manufacturing a semiconductor structure. The method includes: providing a substrate, where the substrate includes a plurality of component areas and peripheral areas surrounding the plurality of component areas; next, forming a sacrificial layer on each of the plurality of component areas, and forming a semiconductor active layer on the sacrificial layer and the substrate not covered with the sacrificial layer; patterning the semiconductor active layer to remove the semiconductor active layer on the peripheral areas so as to form a plurality of annular grooves which expose the sacrificial layer, such that the semiconductor active layer on each of the plurality of component areas is independent; afterwards, removing the sacrificial layer on each of the plurality of component areas through the annular grooves, such that the independent semiconductor active layer is separated from the substrate, where the independent semiconductor active layer forms a semiconductor structure.

Method of manufacturing semiconductor structure

The disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first group III nitride epitaxial layer disposed on a support substrate, a silicon substrate, a bonding layer and a second group III nitride epitaxial layer; wherein the first group III nitride epitaxial layer is bonded to the silicon substrate by the bonding layer; through-silicon-vias are formed in the silicon substrate, and first through-holes are formed in the bonding layer, wherein the through-silicon-vias communicate with the first through-holes; and the second group III nitride epitaxial layer is disposed within the first through-holes and the through-silicon-vias and on the silicon substrate, wherein the second group III nitride epitaxial layer is coupled to the first group III nitride epitaxial layer.

The present invention provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate; forming an amorphous layer on the substrate, wherein the amorphous layer includes a plurality of patterns to expose part of the substrate; forming a metal nitride layer on the amorphous layer; removing the amorphous layer to form a plurality of cavities between the substrate and the metal nitride layer; removing the substrate to form the semiconductor structure. In the present invention, an amorphous layer is formed on the substrate, and a metal nitride layer is formed on the amorphous layer. The amorphous layer can inhibit slip or dislocation during epitaxial growth, thereby improving the quality of the metal nitride layer and improving the performance of the semiconductor structure, while the metal nitride layer can realize self-supporting.

Semiconductor structure manufacturing methods and semiconductor structures

The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate on which at least one light guide groove is provided, the light guide groove penetrating the substrate; and a light emitting structure disposed on one side of the substrate, the light emitting structure including at least one set of a first electrode and a second electrode. The light guide groove at least corresponds to one set of a first electrode and a second electrode to prevent bad points. A wavelength conversion dielectric layer is filled into the light guide groove to avoid a coffee ring effect and achieve uniform and full-color light emission of a light emitting device. The semiconductor structure may further save manufacturing costs and prevent crosstalk between light emitted from various light emitting units.

Semiconductor structure and method for manufacturing the same

A surface roughening method includes the following steps: preparing a first epitaxial layer of a three-dimensional island shape growth over a light emitting structure; and preparing a discontinuous second epitaxial layer over the first epitaxial layer. The surface roughening method provided in the present application is simple and convenient, and improves the efficiency. In addition to the epitaxial growth process, it is not necessary to use an additional process such as wet etching, photonic crystal and other processes to further process the surface of the epitaxial layer, and the method may be implemented by means of one process in a same reaction equipment.

Surface roughening method for light emitting device and light emitting device

An patterned Si substrate-based LED epitaxial wafer and a preparation method therefor, the LED epitaxial wafer comprising: a patterned Si substrate () and an AlOcoating () growing on the patterned Si substrate (); sequentially growing on the AlOcoating () are a nucleating layer (), a first buffer layer (), a first insertion layer (), a second buffer layer (), a second insertion layer (), an n-GaN layer (), a quantum well layer (), a p-GaN layer (), an n-electrode () electrically connected to the n-GaN layer and a p-electrode () electrically connected to the p-GaN layer. The present invention is suitable for the preparation of large-sized LED epitaxial wafers. Furthermore, the crystal quality is improved, and the light extraction efficiency of the LED die is improved.

Patterned Si substrate-based LED epitaxial wafer and preparation method therefor

A semiconductor light-emitting device comprises: an insulating base, a current diffusion layer, light-emitting structure layers and an insulating layer. The current diffusion layer includes: a first electrode connecting part, a second electrode connecting part, N contact parts and N+1 flat parts. N+1 light-emitting structure layers are correspondingly disposed on the N+1 flat parts, and each of the N+1 light-emitting structure layers includes: a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked on a corresponding flat part. N grooves are formed on a side of the second semiconductor layer away from the active layer, depth of the N grooves is less than the thickness of the second semiconductor layer, and the N contact parts correspond to the N grooves.

Semiconductor light-emitting device and manufacturing method therefor

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: a substrate, a bonding metal layer, a reflective layer, a first conductive layer, an active layer, a second conductive layer, first electrode(s) and second electrode(s). The first electrode(s) extends, from one side of the bonding metal layer away from the substrate, to the first conductive layer, to be connected with the bonding metal layer and the first conductive layer. The second electrode(s) penetrates through the substrate and the bonding metal layer to be in contact with the reflective layer. The semiconductor device, forming a structure sharing the first conductive layer, has more uniform illumination and a higher light extraction rate, and eliminates interferences between pixel units, achieves better uniformity of emitted light wavelength and makes distribution of electric current flowing through different pixel units more even.

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Suzhou, China

Liyang Zhang