Intel Corporation

Liwei Cheng

Cheng Xu

Andrew James Brown

Yikang Deng

Zhichao Zhang

Kyu Oh Lee

Ji Yong Park

Siddharth K Alur

Lauren Ashley Link

Jiwei Sun

Jonathan Rosch

Amruthavalli Pallavi Alur

Sheng C Li

Sai Vadlamani

Wei-Lun Kane Jen

Chong Zhang

Ying Wang

Bin Zou

Sri Chaitra J Chavali

Luke J Garner

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

Microelectronic assemblies having conductive structures with different thicknesses on a core substrate

Embodiments include a package substrate, a method of forming the package substrate, and a semiconductor package. A package substrate includes a conductive layer in a dielectric, a first trace and a first via pad of the conductive layer having a first thickness, and a second trace and a second via pad of the conductive layer having a second thickness. The second thickness of second trace and second via pad may be greater than the first thickness of the first trace and first via pad. The dielectric may include a first dielectric thickness and a second dielectric thickness, where the second dielectric thickness may be less than the first dielectric thickness. The package substrate may include a third via having a third thickness on the first via pad, and a fourth via having a fourth thickness on the second via pad, wherein the third thickness is greater than the fourth thickness.

Dual trace thickness for single layer routing

Embodiments herein describe techniques for a semiconductor device including a package substrate. The package substrate includes a via pad at least partially in a core layer. A first dielectric layer having a first dielectric material is above the via pad and the core layer, where the first dielectric layer has a first through hole that is through the first dielectric layer to reach the via pad. A second dielectric layer having a second dielectric material is at least partially filling the first through hole, where the second dielectric layer has a second through hole that is through the second dielectric layer to reach the via pad. A via is further within the second through hole of the second dielectric layer, surrounded by the second dielectric material, and in contact with the via pad. Other embodiments may be described and/or claimed.

Vias for package substrates

An apparatus system is provided which comprises: a substrate; a metal pillar formed on the substrate, the metal pillar comprising a first section and a second section, wherein the first section of the metal pillar is formed by depositing metal in a first opening of a first photoresist layer, and wherein the second section of the metal pillar is formed by depositing metal in a second opening of a second photoresist layer.

Formation of tall metal pillars using multiple photoresist layers

An electronic interconnect may include a substrate. The substrate may include a passageway in the substrate. The passageway may extend from a first surface of the substrate toward a second surface of the substrate. The passageway may be closed at an end of the passageway. The electronic interconnect may include a plated through hole socket coupled to the passageway. The electronic interconnect may include a contact. The contact may include a pin. The pin may be configured to engage with the plated through hole socket. The electronic interconnect may include a solder ball. The solder ball may be coupled to the plated through hole socket.

Plated through hole socketing coupled to a solder ball to engage with a pin

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Chandler, AZ, United States of America

Liwei Cheng