Taiwan Semiconductor Manufacturing Comp. Ltd.

Liu Bo-Tsun

Li-Jui Chen

Shang-Chieh Chien

Po-Chung Cheng

Heng-Hsin Liu

Jong-I Mou

Chieh Hsieh

Chun-Hsien Lin

Fei-Gwo Tsai

Chun-Chia Hsu

Kuan-Hung Chen

Kuo-Hung Chao

Chin-Ti Ko

Wu Cheng-Hung

Peng Jui-Chun

An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

Apparatus and method for generating extreme ultraviolet radiation

Among other things, systems and techniques are provided for detecting defects on a wafer based upon non-correctable error data yielded from a scan of the wafer to determine a topology of the wafer. The non-correctable error data is reconstructed to generate a non-correctable error image map, which is transformed to generate a projection. In some embodiments, the non-correctable error image map is transformed via a feature extraction transform such as a Hough transform or a Radon transform. In some embodiments, the projection is compared to a set of rules to identify a signature in the non-correctable error image map indicative of a defect.

Detection of defects on wafer during semiconductor fabrication

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Taipei, Taiwan

Liu Bo-Tsun