Semitool, Inc.

Texas Instruments Corporation

Linlin Chen

Robert W Batz, Jr

Thomas Lee Ritzdorf

John Lee Klocke

Lyndon W Graham

John M Pedersen

Gregory J Wilson

Paul R McHugh

Jiong-Ping Lu

Robert Allen Weaver

ChangFeng F Xia

Thomas C Taylor

Dakin Fulton

Yaojian Leng

Honglin Guo

Rajesh Baskaran

Jin Zhao

Bioh Kim

David Gonzalez, Jr

Qidu Jiang

M Grant Albrecht

Changfeng Xia

Changfeng F Xia

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Apparatus and method for electrochemically depositing metal on a semiconductor workpiece

An improved copper ECD process. After the copper seed layer () is formed, a first portion of copper film () is plated onto the surface of the seed layer (). The surface of the first portion of the copper film () is then rinsed to equalize the organic adsorption on all sites to prevent preferential copper growth in dense areas. After rinsing, the remaining copper of the copper film () is electrochemically deposited.

Plating-rinse-plating process for fabricating copper interconnects

Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

The present invention is directed to a process for producing structures containing metallized features for use in microelectric workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and the metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Method for applying metal features onto barrier layers using electrochemical deposition

A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric acid in solution with deionized water is applied to the wafer surface to be cleaned preferably while subjected to megasonic assist cleaning. The wafer is preferably then subjected to brush scrubbing and a deionized water rinse with megasonic assist cleaning.

Modified clean chemistry and megasonic nozzle for removing backside CMP slurries

Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

Contact assemblies, methods for making contact assemblies, and plating machines with contact assemblies for plating microelectronic workpieces

The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.

Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application

A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Apparatus and method for electrolytically depositing copper on a workpiece

A method to reduce the copper corrosion of copper interconnects by formingat least one conductive displacement plating layer on the copper interconnects. Also, a method to eliminate the copper corrosion of copper interconnects by formingat least one conductive displacement plating layer on the copper interconnects.

Corrosion resistance for copper interconnects

A method for determining the concentration of an additive X of an electrochemical bath that includes at least one further component Y is set forth. In accordance with the method, a predetermined amount of a starting solution is provided. The starting solution comprises virgin makeup solution that is saturated with the further additive, or forms a mixed solution that is saturated with the further additive when combined with an amount of the electrochemical bath for measurement that is extracted for measurement. A predetermined amount of the extracted electrochemical bath is then added to the predetermined amount of the starting solution to form the mixed solution. At least one electroanalytical measurement cycle it is then executed using the mixed solution and the results of the measurement cycle are compared with a known measurement standard.

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Plano, TX, United States of America

Linlin Chen