Northrop Grumman Space & Mission Systems Corporation

Linh Dang

Po-Hsin Liu

Jennifer Wang

Wayne Yoshida

Weidong Liu

Jane Lee

Michael Edward Barsky

Richard Lai

Xiaobing Mei

Mike Barsky

Gerry Mei

Rich Lai

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

High electron mobility transistor semiconductor device and fabrication method thereof

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Lawndale, CA, United States of America

Linh Dang