Applied Materials, Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Macronix International Co., Ltd.

Integrated Silicon Solution Incorporated

Other

Holtek Microelectronics Inc.

Oracle America, Inc.

Ling Chen

Mei Yin Chang

Hua Chung

Vincent W Ku

Seshadri Ganguli

Christophe Marcadal

Dien-Yeh Wu

Alan Hiroshi Ouye

Alfred W Mak

Wei Cao

Hung-Cheng Sung

Tien-Ler Lin

Jenny Lin

Bo Zheng

Barry Lee Chin

Norman M Nakashima

Fusen E Chen

Tom D Yiu

Fuchia Shone

John Vincent Schmitt

Jianming Fu

Karl Anthony Littau

Praburam Gopalraja

Jick M Yu

Mohan K Bhan

Walter Benjamin Glenn

Albert Wu

Samuel C Wilson

Michael Xiaoxuan Yang

Joseph Yudovsky

Roderick Craig Mosely

Lawrence C Lei

Hong Zhang

Hyungsuk Alexander Yoon

Xin Sheng Guo

Semyon Sherstinsky

Keith K Koai

David C Smith

Sung-Mu Hsu

Yu D Cong

Ying Yu

Siu-han Liao

Leonel Arturo Zuniga

Timothy E Levine

George Michael Bleyle

Chi-Shiung Lo

Ivo Johannes Raaijmakers

Peijun Ding

Ming Xi

Bryan Y Pu

Michael D Welch

Steve G Ghanayem

Hongching Shan

Anzhong Chang

Gongda Yao

Howard E Grunes

Nikolaos Bekiaris

Paul F Smith

Suraj Rengarajan

Dashun Steve Zhou

Marvin De-Dui Liao

Irena H Wysok

Shih-Hung Li

Frank P Chang

Jie Chen

Chyi Chern

Jennifer Meng Tseng

Kuang-Han Ke

Steven T Li

Hsi-Chen Wang

Nien-Tsu Wang

Dave Xiao Dong Yang

Justin Jones

Chi-Yung Wu

Weng Liang Fang

Chih-Ching Steve Chou

Xin Shen Guo

Liang F Weng

Joost Willem Daniel Pronk Van Hoogeveen

Tong Peng

Nils Peder Pedersen

Xuemei Gao

Amol A Chiplunkar

Tony Peng

Harapanahalli Gururaja Rao

Wu Chi-Yung

John Meldrum Perry

Sue Zhang

Ross Adam Margo

Estelle Jeanine Chiquet

Tram Vo

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Gas delivery apparatus and method for atomic layer deposition

A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Enhanced copper growth with ultrathin barrier layer for high performance interconnects

A hybrid architecture of a television (TV) receiving system is disclosed. The architecture includes two portions, a hardware portion and a software portion. The hardware portion includes a minimum amount of hardware to achieve operations of receiving a RF signal, producing an IF signal and outputting data representing the IP signal. The software portion, taking advantage of available computing power (e.g., high-speed microprocessor and a lot of memory) in a computing device and executed therein, includes one or more demodulators, all implemented in software. Each of the demodulators is implemented in accordance with one type of TV standard. Thus depending on the received data, a corresponding demodulator is activated to demodulate the received data and subsequently produces audio and video data. One of the advantages, benefits and objects in the present invention is to have a band of software-based demodulators, any of which may be updated or expanded whenever there is a new TV standard or modification to an existing standard.

Hybrid architecture of TV receiving devices

In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.

Apparatus and method for hybrid chemical processing

Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.

Method and apparatus for generating a precursor for a semiconductor processing system

Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.

Cyclical deposition of refractory metal silicon nitride

Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor

A method for managing system resources including creating a container, wherein creating the container comprises allocating a first portion of a first resource to the container, associating the container with a resource pool, wherein the resource pool is associated with the first resource, determining whether the first portion of the first resource is valid, and activating the container if the first portion of the first resource is valid.

Method and apparatus for managing system resources using a container model

An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Gas delivery apparatus for atomic layer deposition

Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.

Multi-component doping of copper seed layer

Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

Method for providing gas to a processing chamber

Embodiments described herein relate to depositing a cobalt-containing layer by a cyclical deposition process while forming interconnects on a substrate. In one embodiment, a method for forming an interconnect structure is provided which includes depositing a tungsten-containing barrier layer over an exposed contact metal surface within an aperture formed in an insulating material disposed on a substrate, forming a cobalt-containing layer on the tungsten-containing barrier layer using a cyclical deposition process by sequentially exposing the substrate to a cobalt precursor gas and a silicon reducing gas, wherein the cobalt precursor gas contains a cobalt precursor having a cyclopentadienyl ligand, and depositing a copper material on the cobalt-containing layer.

Noble metal layer formation for copper film deposition

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Sunnyvale, CA, United States of America

Ling Chen