Chinese Academy of Sciences

Lina Shi

Ming Liu

Changqing Xie

Dongmei Li

Hailiang Li

Xiaoli Zhu

Jiebin Niu

Kaiping Zhang

Nan Gao

Yilei Hua

Longjie Li

The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a quartz substrate by using a mixed gas containing a fluorine-based gas, wherein metal atoms and/or ions of the metal material are sputtered to a surface of the quartz substrate, to form a non-volatile metal fluoride on the surface of the quartz substrate; forming a micromask by a product of etching generated by reactive ion etching gathering around the non-volatile metal fluoride; and etching the micromask and the quartz substrate simultaneously, to form an anti-reflective layer having a sub-wavelength structure.

Method for fabricating anti-reflective layer on quartz surface by using metal-induced self-masking etching technique

A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (), extreme ultraviolet light transmission parts (), an extreme ultraviolet lithography mask (), a photon sieve () and a collection () and analysis () system. Point light source beams emitted by the extreme ultraviolet light source () are focused on the extreme ultraviolet lithography mask () through the extreme ultraviolet light transmission parts (); the extreme ultraviolet lithography mask () emits scattered light and illuminates the photon sieve (); and the photon sieve () forms a dark field image and transmits the same to the collection () and analysis () system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.

Defect detection system for extreme ultraviolet lithography mask

A method of manufacturing a sub-wavelength extreme ultraviolet metal transmission grating is disclosed. In one aspect, the method comprises forming a silicon nitride self-supporting film window on a back surface of a silicon-based substrate having both surfaces polished, then spin-coating a silicon nitride film on a front surface of the substrate with an electron beam resist HSQ. Then, performing electron beam direct writing exposure on the HSQ, developing and fixing to form a plurality of grating line patterns and a ring pattern surrounding the grating line patterns. Then depositing a chrome material on the front surface of the substrate through magnetron sputtering. Then, removing the chrome material inside the ring pattern. Then, growing a gold material on the front surface of the substrate through atomic layer deposition. Lastly, removing the gold material on the chrome material outside the ring pattern as well as on and between the grating line patterns, thereby only retaining the gold material on sidewalls of the grating line patterns.

Sub-wavelength extreme ultraviolet metal transmission grating and manufacturing method thereof

The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.

Projection-type photolithography system using composite photon sieve

Growing community of inventors

Beijing, China

Lina Shi