Beijing Naura Microelectronics Equipment Co., Ltd.

Lihui Wen

Liang Li

Jun Zhang

Peng Chen

Xin Wu

Xu Bin Liu

Wei Xia

Henan Zhang

Peijun Ding

Mengxin Zhao

Zhenguo Ma

Hougong Wang

Jiansheng Liu

Yunlong Hu

Fuping Chu

Xinxian Jiang

Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.

Gas phase etching device and gas phase etching apparatus

The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

Hot plate and substrate processing equipment using the same

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Beijing, China

Lihui Wen