Tokyo Electron Limited

Lifu Li

Hiroshi Tsujimoto

Gyeong Min Park

Takaki Kobune

Takashi Aramaki

Nobutaka Sasaki

Wataru Shimizu

Yoshimitsu Kon

Tomonori Miwa

Atsushi Ogata

Ikko Tanaka

Shusei Kato

Toshiki Akama

Kojiro Matsuzaka

Ryota Koitabashi

Atsushi Uto

Atsushi Terasawa

Hironobu Kudo

A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.

Substrate processing apparatus and shutter

An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.

Upper electrode assembly

A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

Substrate processing system and method for installing edge ring

A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Plasma processing apparatus

A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.

A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Substrate processing apparatus and control method of substrate processing apparatus

A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

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Miyagi, Japan

Lifu Li