United Microelectronics Corp.

Lien-Sheng Chung

Cheng-Tzung Tsai

Cheng-Chih Kung

Chi-Hung Wei

Wei-Jyh Liu

Hsin-Hsu Lin

Tai-Yuan Li

Chen-Hao Hwang

A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.

Method of removing photoresist and photoresist rework method

A method is disclosed for removing pad nodules. The method provides a wafer comprising pads and pad nodules which are formed on said pads, wherein said pads are made from a metal selected from the group consisting of aluminum and an aluminum-copper alloy. Then, the method dips the wafer into deionized water for removing the pad nodules. Thereafter, the method spin-dries the wafer and coats an alkaloid developer on the wafer for further removing the pad nodules. Finally, the method removes the alkaloid developer from the wafer and bakes the wafer.

Method for removing pad nodules

A phase-shifting mask structure has a base plate, a pattern zone on the base plate and a peripheral region on the periphery of the base plate around the pattern zone. The peripheral region and the pattern zone further have a plurality of alignment-checking patterns and alignment slits. Each alignment-checking pattern has a first pattern of light-blocking thin films and a second pattern of light-penetrating thin films. Similarly, each alignment slit has a third pattern of light-blocking thin films and a fourth pattern of light-penetrating thin films. In this invention, absolute light-blocking thin films are used in the light-blocking portions of the alignment-checking pattern and the alignment slits instead of the semi-transparent thin films in a conventional system. Thus, alignment checking errors due to the distortion of fiducial marks are minimized, and mask layers are more precisely aligned.

Phase-shifting mask structure

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Hsinchu, Taiwan

Lien-Sheng Chung