Advanced Micro Devices Corporation

Globalfoundries Inc.

Lie Larry Zhao

Paul Raymond Besser

Srikanteswara Dakshina-Murthy

Jeremy Isaac Martin

Nicholas John Kepler

Christian Zistl

Eric M Apelgren

Jonathan B Smith

The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.

Resist trim process to define small openings in dielectric layers

The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises forming a layer of dielectric material, forming a hard mask layer above the layer of dielectric material, and forming an opening in the hard mask layer. The method further comprises forming a sidewall spacer in the opening in the hard mask layer that defines a reduced opening, forming an opening in the layer of dielectric material below the reduced opening, and forming a conductive interconnection in the opening in the dielectric layer.

Method of defining small openings in dielectric layers

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Austin, TX, United States of America

Lie Larry Zhao