Honeywell International Inc.

Input/output, Inc.

Ion Geophysical Corporation

Lianzhong Yu

Duli Yu

Howard D Goldberg

Peter H LaFond

Martin Arnold Schmidt

Arjun Selvakumar

Ken L Yang

Robert P Ried

Thomas R Keyser

Ben William Jones

Peter Maxwell

Lawrence Philip Behn

Axel Michael Sigmar

Matthew W Ip

Thomas M Buie

James L Marsh

Guido Lemke

W Marc Stalnaker

Larry Rushefsky

Richard Laroo

Sjoerd Altman

Kees Faber

David Morgan

Klaus Domagalski

Demetrios Balderes

Ray Rinne

Ben Jones

Peter H Lafond

An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Wafer level packaged MEMS device

Methods for creating a microelectromechanical systems (MEMS) device using a single double, silicon-on-insulator (SOI) wafer. The double SOI wafer includes at least a base layer of silicon, a first layer of silicon, and a second layer of silicon, the layers of silicon are separated by an oxide layer. A stationary electrode with rigid support beams is formed into the second layer of silicon. A proof mass and at least one spring are formed into the first layer of silicon. The proof mass is separated from the stationary electrode by a first gap and the proof mass is separated from the base silicon layer by a second gap.

Methods of creating a micro electro-mechanical systems accelerometer using a single double silicon-on-insulator wafer

Methods for creating at least one micro-electromechanical (MEMS) structure in a silicon-on-insulator (SOI) wafer. The SOI wafer with an extra layer of oxide is etched according to a predefined pattern. A layer of oxide is deposited over exposed surfaces. An etchant selectively removes the oxide to expose the SOI wafer substrate. A portion of the SOI substrate under at least one MEMS structure is removed, thereby releasing the MEMS structure to be used in the formation of an accelerometer.

Single silicon-on-insulator (SOI) wafer accelerometer fabrication

Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.

Single SOI wafer accelerometer fabrication process

A MEMS device having a proof mass resiliently mounted above a substrate has projections formed on adjacent surfaces of the mass and substrate. The device is formed by creating a plurality of holes in the upper layer. A substance suitable for removing the intermediate layer without substantially removing the upper layer and substrate is introduced through the holes. A substance removing the upper layer, the substrate, or both, is then introduced through the holes to remove a small amount of the substrate and upper layer. Portions of the intermediate layer between the projections are then removed. The dimple structure fabricated from this process will prevent MEMS device stiction both in its final release and device operation.

Method of making dimple structure for prevention of MEMS device stiction

A method of manufacturing a vertical comb structure for a micro electromechanical (MEMS) device. Tooth structures are formed on a first wafer. A second wafer is then bonded to the tooth structures of the first wafer. The tooth structures are then released to form a comb structure. Forming the tooth structures on the first wafer includes using oxidation, photolithography, etching, epitaxy, and chemical and mechanical polishing to create the tooth structures on the first wafer.

Comb structure fabrication methods and systems

A Micro-Electro-Mechanical System closed-loop (MEMS) inertial device having a vertical comb drive that exhibits improved performance under vibration. The device includes one or more stator tines extending from a housing into a cavity formed by the housing. One or more rotor tines extend from a proof mass located in the cavity. The proof mass is joined to the housing by flexures which allow movement in the vertical direction. The rotor tines have a first length value in the direction of movement and the stator tines have a second length value in the direction of movement. The second length value is greater than the first length value. Also, the stator tines include two electrically separated portions. The lesser length of the rotor tines relative to the stator tines causes the attractive force between the rotor tines and either the upper or lower half of the stator tines to be relatively independent of rotor vertical position. This, in turn, produces better accelerometer accuracy in vibration environments.

MEMS vertical comb drive with improved vibration performance

Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

System and method for uniform multi-plane silicon oxide layer formation for optical applications

An apparatus and method for sensor architecture based on bulk machining of Silicon-On-Oxide wafers and fusion bonding that provides a symmetric, nearly all-silicon, hermetically sealed MEMS device having a sensor mechanism formed in an active semiconductor layer, and opposing silicon cover plates each having active layers bonded to opposite faces of the sensor mechanism. The mechanism is structured with sensor mechanical features structurally supported by at least one mechanism anchor. The active layers of the cover plates each include interior features structured to cooperate with the sensor mechanical features and an anchor structured to cooperate with the mechanism anchor. A handle layer of each cover plate includes a pit extending there through in alignment with the cover plate anchor. An unbroken rim of dielectric material forms a seal between the cover plate anchor and the pit and exposes an external surface of the cover plate anchor.

High performance MEMS packaging architecture

A sensor apparatus () includes a plural different spatial direction axis of sensitivity positioned sensor package containing sensor module () supported by a planar surface () within a cavity () of a housing () coupled to a first end cap () by a PC-board connection (). Housing () is further coupled to first end cap () by a first coupling member () and a second coupling member () and is also coupled to an opposite second end cap () by a third coupling member () and a fourth coupling member (). Interface sealing members () seal between housing () and first end cap (). Interface sealing members () seal between housing () and second end cap ().

Integrated and multi-axis sensor assembly and packaging

Microelectromechanical system (MEMS) integrated micro devices and acceleration sensor devices formed of first and second silicon wafers that are permanently joined together in a composite silicon wafer having an array of first complete stand-alone three-dimensional micromechanical device features formed in the first silicon wafer, an array of second complete stand-alone three-dimensional micromechanical device features formed in the second silicon wafer, and one or more composite three-dimensional micromechanical device features formed of first partial three-dimensional micromechanical device features formed in the first silicon wafer that are permanently joined to cooperating second partial three-dimensional micromechanical device features formed in the second silicon wafer.

Vibrating beam accelerometer

A method for fabrication of microelectromechanical systems (MEMS) integrated micro devices and acceleration sensor devices formed according to the method, the method being micromachining an array of first three-dimensional micromechanical device features in a first silicon wafer; micromachining an array of second three-dimensional micromechanical device features in a second silicon wafer, wherein the second three-dimensional micromechanical device features are configured to cooperate with the first three-dimensional micromechanical device features when joined therewith; mutually aligning the first and second arrays of device features by aligning the first and second wafers; permanently joining the first and second arrays of device features into an array of integrated micro devices as a function of permanently joining the first and second wafers into a single composite wafer; and subsequently separating the array of integral devices into individual devices each having a set of the first and second device features.

Vibrating beam accelerometer two-wafer fabrication process

Disclosed is an accelerometer for measuring seismic data. The accelerometer includes a proof mass that is resiliently coupled to a support structure by folded beams, S-shaped balanced beams, straight beams, and/or folded beams with resonance damping. The support structure further includes travel stops for limiting transverse motion of the proof mass.

Accelerometer with folded beams

A merged-mask micro-machining process is provided that includes the application of a plurality of layers of masking material that are patterned to provide a plurality of etching masks.

Merged-mask micro-machining process

A micro machined structure includes one or more temporary bridges for temporarily coupling the micro machined structure to a support structure.

Growing community of inventors

Redmond, WA, United States of America

Lianzhong Yu