Changxin Memory Technologies, Inc.

Lianhong Wang

Weiping Bai

Xingsong Su

Er-Xuan Ping

Erxuan Ping

Mengkang Yu

A preparation method for the capacitor structure includes: forming a dielectric layer on a first electrode, wherein, the dielectric layer includes a first amorphous layer and a high dielectric constant layer which are stacked, the first amorphous layer maintaining an amorphous structure after annealing, and the high dielectric constant layer being formed by crystallizing an initial dielectric constant layer after annealing; and forming a second electrode on the dielectric layer. Since the first amorphous layer remains an amorphous structure after annealing, electron transport can be suppressed, thereby reducing the leakage current of the capacitor structure.

Preparation method for capacitor structure, capacitor structure, and memory

A capacitor structure includes two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein the dielectric layer includes at least two perovskite layers stacked; an amorphous layer is provided between every two adjacent perovskite layers; two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively.

Manufacturing method for capacitor structure, capacitor structure and memory

Embodiment relates to the field of semiconductor technologies, and proposes a semiconductor device and a fabrication method thereof. The semiconductor device includes: a substrate, a semiconductor structure, an insulating layer, and a conductive layer. The semiconductor structure is positioned on a side of the substrate and includes a first semiconductor structure and a second semiconductor structure, wherein the first semiconductor structure and the second semiconductor structure form a PN junction. The insulating layer is positioned on a side of the semiconductor structure facing away from the substrate. The conductive layer is positioned on a side of the insulating layer facing away from the substrate, and an orthographic projection of the conductive layer on the substrate at least partially overlaps an orthographic projection of the PN junction on the substrate.

Growing community of inventors

Hefei, China

Lianhong Wang