Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Liang-Hsiang Chen

Jing-Yi Yan

Ming-Chou Chen

Jia-Chong Ho

Chen-Wei Lin

Wen-Tung Wang

Chih-Chieh Hsu

Chinyu Su

Che-Chih Hsu

Mei-Ru Lin

Chih-Wei Chu

Hung-Chien Lin

Xiu Zhang

Chin-Lung Liao

Bo-Cheng Kung

Chia-Ming Yeh

Chen-Yu Chiang

Yo-Chi Liang

A method of forming a semiconductor device is disclosed. The method includes forming a plurality of isolation regions on a semiconductor substrate, forming a protective layer in a resistor region of the semiconductor substrate, after forming the protective layer, etching a gate dielectric layer to form first and second gate dielectric layers of a transistor in a transistor region of the semiconductor substrate, removing the protective layer, forming first and second dummy gate stacks over the first and second gate dielectric layers, respectively, forming a resistor in the resistor region, forming third and fourth dummy gate stacks over the resistor, and replacing each of the first, second, third, and fourth dummy gate stacks with a conductive material.

Semiconductor device having a resistor

A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

Thin-film device

A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Semiconductor device structure, method for manufacturing the same and pixel structure using the same

In an embodiment of the disclosure, a bithiophene derivative is provided. The bithiophene derivative has formula (I):  In formula (I), R is C8-25 alkyl, and A includes In another embodiment of the disclosure, a semiconductor device including the bithiophene derivative is further provided.

Bithiophene derivatives and semiconductor devices comprising the same

A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.

Thin film transistor

The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2',3&#x2032;-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2&#x2032;,3&#x2032;-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.

Organic semiconductor compounds

A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition.

Composition for photosensitive organic dielectric material and application thereof

A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.

Reflective liquid crystal display, top-emitting OLED display and fabrication method thereof

A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.

Growing community of inventors

Taichung, Taiwan

Liang-Hsiang Chen